IRFR3607 is a 75V N-channel HEXFET Power MOSFET in a D-Pak package, designed for high-efficiency synchronous rectification and high-speed switching in SMPS and uninterruptible power supplies. It features a maximum continuous drain current of 80A at 25°C silicon limitation and 56A at 100°C, with a typical on-resistance of 7.34mΩ at 10V gate drive. The device supports a peak pulsed drain current of 310A, has a single-pulse avalanche energy rating of 120mJ, and operates with a junction temperature range of -55°C to +175°C. It meets RoHS standards and is qualified for industrial use. Thermal resistance is 1.045°C/W junction-to-case and 50°C/W junction-to-ambient on PCB. Capacitance values include 3070pF input, 280pF output, and 130pF reverse transfer at 1MHz. The body diode has a reverse recovery time up to 50ns and a forward voltage of 1.3V at 46A.
75V Single N-Channel HEXFET Power MOSFET in a D-Pak package
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
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| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IRFR3607 |
| Product Name | N-Channel Power MOSFET |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.0090 ohms |
