Manufacturer: Infineon Technologies
Win Source Part Number: 1040050-IRFR3518TRPB
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 110W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 80V
Continuous Drain Current at 25°C: 38A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 56nC @ 10V
Max Input Capacitance: 1710pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 29 mOhm @ 18A, 10V
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Balance
N-Channel 80V 38A (Tc) 110W (Tc) Surface Mount D-Pak
MOSFET N-CH 80V 38A DPAK Product overview: IRFR3518TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 38A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, 38A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFR3518TRPBF can be used for catalog matching and distributor lookup.
MOSFET N-CH 80V 38A DPAK
MOSFET, N-CH, 80V, 38A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:38A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.024ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation RoHS Compliant: Yes
MOSFET, 80V, 38A, 29 MOHM, 37 NC QG, D-PAK
MOSFET MOSFT 80V 38A 29mOhm 37nC
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Allied Electronics, Inc. | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1040050-IRFR3518TRPBF | IRFR3518TRPBFTR-ND | 278-IRFR3518TRPBF | IRFR3518TRPBF | 49AC0312 | 70019008 | IRFR3518TRPBF |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR3518TRPBF | Single FETs, MOSFETs | 80V 38A DPAK MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 80V, 38A, To-252; Transistor Polarity Infineon | MOSFET, 80V, 38A, 29 MOHM, 37 NC QG, D-PAK | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | |||||
| V(BR)DSS | 80 volts | ||||||
| PD | 110000 milliwatts | 110000 milliwatts | |||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
