Infineon Technologies AG FETs - Single - IRFPS3810 IRFPS3810

Description
Manufacturer: Infineon Technologies Win Source Part Number: 1187834-IRFPS3810 Packaging: Bulk Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: SUPER-247 (TO-274AA) Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 175°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-274AA Power Dissipation (Maximum): 580W Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 25 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 100V Id - Continuous Drain Current: 170A Rds On (Maximum) at Id, Vgs: 9mOhm at 100A, 10V Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 390nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 6790pF at 25V
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 1187834-IRFPS3810 Packaging: Bulk Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: SUPER-247 (TO-274AA) Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 175°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-274AA Power Dissipation (Maximum): 580W Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 25 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 100V Id - Continuous Drain Current: 170A Rds On (Maximum) at Id, Vgs: 9mOhm at 100A, 10V Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 390nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 6790pF at 25V
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Suppliers

Company
Product
Description
Supplier Links
FETs - Single - IRFPS3810 - 1187834-IRFPS3810 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IRFPS3810
1187834-IRFPS3810
FETs - Single - IRFPS3810 1187834-IRFPS3810
Manufacturer: Infineon Technologies Win Source Part Number: 1187834-IRFPS3810 Packaging: Bulk Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: SUPER-247 (TO-274AA) Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 175°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-274AA Power Dissipation (Maximum): 580W Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 25 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 100V Id - Continuous Drain Current: 170A Rds On (Maximum) at Id, Vgs: 9mOhm at 100A, 10V Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 390nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 6790pF at 25V

Manufacturer: Infineon Technologies
Win Source Part Number: 1187834-IRFPS3810
Packaging: Bulk
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: SUPER-247 (TO-274AA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-274AA
Power Dissipation (Maximum): 580W
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 25
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 100V
Id - Continuous Drain Current: 170A
Rds On (Maximum) at Id, Vgs: 9mOhm at 100A, 10V
Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 390nC at 10V
Gate Source Voltage (Maximum): ±30V
Input Capacitance (Ciss) (Maximum) at Vds: 6790pF at 25V

Buy Now
Single FETs, MOSFETs - IRFPS3810-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFPS3810-ND
Single FETs, MOSFETs IRFPS3810-ND
N-Channel 100V 170A (Tc) 580W (Tc) Through Hole SUPER-247™ (TO-274AA)

N-Channel 100V 170A (Tc) 580W (Tc) Through Hole SUPER-247™ (TO-274AA)

Buy Now Datasheet
Single FETs, MOSFETs - IRFPS3810 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRFPS3810
Single FETs, MOSFETs IRFPS3810
MOSFET N-CH 100V 170A SUPER247

MOSFET N-CH 100V 170A SUPER247

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFPS3810 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFPS3810
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFPS3810
MOSFET N-CH 100V 170A SUPER247

MOSFET N-CH 100V 170A SUPER247

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Power MOSFET Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1187834-IRFPS3810 IRFPS3810-ND IRFPS3810 IRFPS3810
Product Name FETs - Single - IRFPS3810 Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 100 volts 100 volts
QG 390 nC
PD 580000 milliwatts 580000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
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