Infineon Technologies AG N-Channel Power MOSFET IRFP90N20D

Description
200V Single N-Channel Power MOSFET in a TO-247 package The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design. Summary of Features Planar cell structure for wide SOA Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard Silicon optimized for applications switching below <100kHz Industry standard through-hole power package High current rating Benefits Increased ruggedness Wide availability from distribution partners Industry standard qualification level High performance in low frequency applications Standard pinout allows for drop in replacement High current carrying capability Designers who used this product also designed with IRF9540NS | P-Channel Power MOSFET IRFU5305 | P-Channel Power MOSFET IRFR3607 | N-Channel Power MOSFET IPD33CN10N G | N-Channel Power MOSFET IRF9540N | P-Channel Power MOSFET IRFI3205 | N-Channel Power MOSFET IR2110S | Gate driver ICs IRFR6215 | P-Channel Power MOSFET IR2112S | Gate driver ICs IRFR5410 | P-Channel Power MOSFET IRF9540NS | P-Channel Power MOSFET IRFU5305 | P-Channel Power MOSFET IRFR3607 | N-Channel Power MOSFET IPD33CN10N G | N-Channel Power MOSFET IRF9540N | P-Channel Power MOSFET IRFI3205 | N-Channel Power MOSFET IR2110S | Gate driver ICs IRFR6215 | P-Channel Power MOSFET 1 2 3
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Description
200V Single N-Channel Power MOSFET in a TO-247 package The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design. Summary of Features Planar cell structure for wide SOA Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard Silicon optimized for applications switching below <100kHz Industry standard through-hole power package High current rating Benefits Increased ruggedness Wide availability from distribution partners Industry standard qualification level High performance in low frequency applications Standard pinout allows for drop in replacement High current carrying capability Designers who used this product also designed with IRF9540NS | P-Channel Power MOSFET IRFU5305 | P-Channel Power MOSFET IRFR3607 | N-Channel Power MOSFET IPD33CN10N G | N-Channel Power MOSFET IRF9540N | P-Channel Power MOSFET IRFI3205 | N-Channel Power MOSFET IR2110S | Gate driver ICs IRFR6215 | P-Channel Power MOSFET IR2112S | Gate driver ICs IRFR5410 | P-Channel Power MOSFET IRF9540NS | P-Channel Power MOSFET IRFU5305 | P-Channel Power MOSFET IRFR3607 | N-Channel Power MOSFET IPD33CN10N G | N-Channel Power MOSFET IRF9540N | P-Channel Power MOSFET IRFI3205 | N-Channel Power MOSFET IR2110S | Gate driver ICs IRFR6215 | P-Channel Power MOSFET 1 2 3
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Datasheet
Datasheet Summary
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IRFP90N20DPbF is a 200V N-channel power MOSFET in a TO-247AC package, designed for high-frequency DC-DC converters. It has a continuous drain current of 94A at 25°C and 66A at 100°C, with a maximum on-resistance of 0.023Ω at 10V gate-source voltage. The device supports a peak pulsed drain current of 380A and a single pulse avalanche energy of 1010mJ. Thermal resistance from junction to case is 0.26°C/W, and junction-to-ambient is 40°C/W. Operating junction and storage temperatures range from -55°C to 175°C. The part is lead-free and meets RoHS requirements.

Datasheet Summary
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IRFP90N20DPbF is a 200V N-channel power MOSFET in a TO-247AC package, designed for high-frequency DC-DC converters. It has a continuous drain current of 94A at 25°C and 66A at 100°C, with a maximum on-resistance of 0.023Ω at 10V gate-source voltage. The device supports a peak pulsed drain current of 380A and a single pulse avalanche energy of 1010mJ. Thermal resistance from junction to case is 0.26°C/W, and junction-to-ambient is 40°C/W. Operating junction and storage temperatures range from -55°C to 175°C. The part is lead-free and meets RoHS requirements.

Suppliers

Company
Product
Description
Supplier Links
N-Channel Power MOSFET - IRFP90N20D - Infineon Technologies AG
Neubiberg, Germany
N-Channel Power MOSFET
IRFP90N20D
N-Channel Power MOSFET IRFP90N20D
200V Single N-Channel Power MOSFET in a TO-247 package The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design. Summary of Features Planar cell structure for wide SOA Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard Silicon optimized for applications switching below <100kHz Industry standard through-hole power package High current rating Benefits Increased ruggedness Wide availability from distribution partners Industry standard qualification level High performance in low frequency applications Standard pinout allows for drop in replacement High current carrying capability Designers who used this product also designed with IRF9540NS | P-Channel Power MOSFET IRFU5305 | P-Channel Power MOSFET IRFR3607 | N-Channel Power MOSFET IPD33CN10N G | N-Channel Power MOSFET IRF9540N | P-Channel Power MOSFET IRFI3205 | N-Channel Power MOSFET IR2110S | Gate driver ICs IRFR6215 | P-Channel Power MOSFET IR2112S | Gate driver ICs IRFR5410 | P-Channel Power MOSFET IRF9540NS | P-Channel Power MOSFET IRFU5305 | P-Channel Power MOSFET IRFR3607 | N-Channel Power MOSFET IPD33CN10N G | N-Channel Power MOSFET IRF9540N | P-Channel Power MOSFET IRFI3205 | N-Channel Power MOSFET IR2110S | Gate driver ICs IRFR6215 | P-Channel Power MOSFET 1 2 3

200V Single N-Channel Power MOSFET in a TO-247 package

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.


Summary of Features

  • Planar cell structure for wide SOA
  • Optimized for broadest availability from distribution partners
  • Product qualification according to JEDEC standard
  • Silicon optimized for applications switching below <100kHz
  • Industry standard through-hole power package
  • High current rating

Benefits

  • Increased ruggedness
  • Wide availability from distribution partners
  • Industry standard qualification level
  • High performance in low frequency applications
  • Standard pinout allows for drop in replacement
  • High current carrying capability

Designers who used this product also designed with


  • IRF9540NS |
    P-Channel Power MOSFET
  • IRFU5305 |
    P-Channel Power MOSFET
  • IRFR3607 |
    N-Channel Power MOSFET
  • IPD33CN10N G |
    N-Channel Power MOSFET
  • IRF9540N |
    P-Channel Power MOSFET
  • IRFI3205 |
    N-Channel Power MOSFET
  • IR2110S |
    Gate driver ICs
  • IRFR6215 |
    P-Channel Power MOSFET
  • IR2112S |
    Gate driver ICs
  • IRFR5410 |
    P-Channel Power MOSFET
  • IRF9540NS |
    P-Channel Power MOSFET
  • IRFU5305 |
    P-Channel Power MOSFET
  • IRFR3607 |
    N-Channel Power MOSFET
  • IPD33CN10N G |
    N-Channel Power MOSFET
  • IRF9540N |
    P-Channel Power MOSFET
  • IRFI3205 |
    N-Channel Power MOSFET
  • IR2110S |
    Gate driver ICs
  • IRFR6215 |
    P-Channel Power MOSFET

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Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFP90N20D - 1187808-IRFP90N20D - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFP90N20D
1187808-IRFP90N20D
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFP90N20D 1187808-IRFP90N20D
Manufacturer: INTERNATIONAL RECTIFIER Win Source Part Number: 1187808-IRFP90N20D Manufacturer Homepage: www.irf.com Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Limited Application Field: Used in Power Management

Manufacturer: INTERNATIONAL RECTIFIER
Win Source Part Number: 1187808-IRFP90N20D
Manufacturer Homepage: www.irf.com
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management

Buy Now
Singapore, Singapore
N-Channel 94A 200V 0.023ohm MOSFET Transistor
285-IRFP90N20D
N-Channel 94A 200V 0.023ohm MOSFET Transistor 285-IRFP90N20D
Power Field-Effect Transistor, 94A I(D), 200V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, TO-247AC, 3 PIN Product overview: IRFP90N20D from International Rectifier is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 94A, 200V, 0.023ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 94A, 200V, 0.023ohm, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IRFP90N20D can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, 94A I(D), 200V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, TO-247AC, 3 PIN Product overview: IRFP90N20D from International Rectifier is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 94A, 200V, 0.023ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 94A, 200V, 0.023ohm, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IRFP90N20D can be used for catalog matching and distributor lookup.

Supplier's Site

Technical Specifications

  Infineon Technologies AG Win Source Electronics ERSAELECTRONICS PTE. LTD.
Product Category Power MOSFET Power MOSFET Metal-Oxide Semiconductor FET (MOSFET)
Product Number IRFP90N20D 1187808-IRFP90N20D 285-IRFP90N20D
Product Name N-Channel Power MOSFET TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFP90N20D N-Channel 94A 200V 0.023ohm MOSFET Transistor
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0230 ohms
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