IRFP4468 - 12V-300V N-CHANNEL PO
MOSFET N-CH 100V 195A TO247AC
MOSFET N-Ch 100V 290A HEXFET TO247AC
MOSFET N-Ch 100V 290A HEXFET TO247AC
MOSFET N-CH 100V 195A TO247AC Product overview: IRFP4468PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 195A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 195A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFP4468PBF can be used for catalog matching and distributor lookup.
Manufacturer: Infineon Technologies
Win Source Part Number: 087414-IRFP4468PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 520W (Tc)
Family Name: IRFP4468
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-247AC
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 195A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 540nC @ 10V
Max Input Capacitance: 19860pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.6 mOhm @ 180A, 10V
Alternative Parts (Cross-Reference): IXFK420N10T;
Introduction Date: May 21, 2008
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance
N-Channel 100V 195A (Tc) 520W (Tc) Through Hole TO-247AC
100V 195A 520W 2.6mΩ@10V,180A 4V@250uA N Channel TO-247AC-3 MOSFETs ROHS
MOSFET MOSFT 100V 290A 2.6mOhm 360nC Qg
MOSFET, N Ch., 100V, 290A, 2.6 MOHM, 360 NC QG, TO-247AC, Pb-Free
MOSFET N-CH 100V 195A TO247AC
TRANSISTOR, MOSFET, N CHANNEL, 100 V, 290 A CONTINUOUS DRAIN CURRENT, 0.0026 OHM, 3-PIN. FREE 2 YEAR RADWELL WARRANTY
N CHANNEL MOSFET, 100V, 290A, TO-247AC; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:290A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; MSL:- RoHS Compliant: Yes
| ODG (Origin Data Global) | RS Components, Ltd. | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | LCSC Electronics Technology (HK) Limited | VAST STOCK CO., LIMITED | Allied Electronics, Inc. | Shenzhen Shengyu Electronics Technology Limited | Radwell International | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRFP4468PBF | 6887014 | 6887014P | 278-IRFP4468PBF | 087414-IRFP4468PBF | IRFP4468PBF-ND | IRFP4468PBF | IRFP4468PBF | 70017924 | IRFP4468PBF | 66790167 | 19P2517 |
| Product Name | Single FETs, MOSFETs | MOSFETs | MOSFETs | 100V 195A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFP4468PBF | Single FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs | MOSFET | MOSFET, N Ch., 100V, 290A, 2.6 MOHM, 360 NC QG, TO-247AC, Pb-Free | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Transistor | N Channel Mosfet, 100V, 290A, To-247Ac; Channel Type Infineon |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | |||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||||||
| V(BR)DSS | 100 volts | 100 volts | 100 volts | 100 volts | ||||||||
| IDSS | 195000 milliamps | 290000 milliamps | ||||||||||
| PD | 520000 milliwatts | 520 milliwatts | 520000 milliwatts | 520000 milliwatts |
