Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFP4310ZPBF IRFP4310ZPBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 083561-IRFP4310ZPBF Packaging: Bulk Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 280W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-247AC Dimension: TO-247-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 120A (Tc) Gate-Source Threshold Voltage: 4V @ 150μA Max Gate Charge: 170nC @ 10V Max Input Capacitance: 6860pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6 mOhm @ 75A, 10V Alternative Parts (Cross-Reference): IXFK200N10P; STW120NF10; IRFP4310Z; IRFP4310ZPBF; Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 083561-IRFP4310ZPBF Packaging: Bulk Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 280W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-247AC Dimension: TO-247-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 120A (Tc) Gate-Source Threshold Voltage: 4V @ 150μA Max Gate Charge: 170nC @ 10V Max Input Capacitance: 6860pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6 mOhm @ 75A, 10V Alternative Parts (Cross-Reference): IXFK200N10P; STW120NF10; IRFP4310Z; IRFP4310ZPBF; Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFP4310ZPBF - 083561-IRFP4310ZPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFP4310ZPBF
083561-IRFP4310ZPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFP4310ZPBF 083561-IRFP4310ZPBF
Manufacturer: Infineon Technologies Win Source Part Number: 083561-IRFP4310ZPBF Packaging: Bulk Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 280W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-247AC Dimension: TO-247-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 120A (Tc) Gate-Source Threshold Voltage: 4V @ 150μA Max Gate Charge: 170nC @ 10V Max Input Capacitance: 6860pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6 mOhm @ 75A, 10V Alternative Parts (Cross-Reference): IXFK200N10P; STW120NF10; IRFP4310Z; IRFP4310ZPBF; Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 083561-IRFP4310ZPBF
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 280W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-247AC
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 120A (Tc)
Gate-Source Threshold Voltage: 4V @ 150μA
Max Gate Charge: 170nC @ 10V
Max Input Capacitance: 6860pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6 mOhm @ 75A, 10V
Alternative Parts (Cross-Reference): IXFK200N10P; STW120NF10; IRFP4310Z; IRFP4310ZPBF;
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - IRFP4310ZPBF - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRFP4310ZPBF
Single FETs, MOSFETs IRFP4310ZPBF
MOSFET N-CH 100V 120A TO247AC

MOSFET N-CH 100V 120A TO247AC

Supplier's Site Datasheet
Single FETs, MOSFETs - 448-IRFP4310ZPBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
448-IRFP4310ZPBF-ND
Single FETs, MOSFETs 448-IRFP4310ZPBF-ND
N-Channel 100V 120A (Tc) 280W (Tc) Through Hole TO-247AC

N-Channel 100V 120A (Tc) 280W (Tc) Through Hole TO-247AC

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFP4310ZPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFP4310ZPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFP4310ZPBF
MOSFET N-CH 100V 120A TO247AC

MOSFET N-CH 100V 120A TO247AC

Supplier's Site
Sheung Wan, Hong Kong
MOSFET MOSFT 100V 127A 6mOhm 120nC Qg

MOSFET MOSFT 100V 127A 6mOhm 120nC Qg

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 083561-IRFP4310ZPBF IRFP4310ZPBF 448-IRFP4310ZPBF-ND IRFP4310ZPBF IRFP4310ZPBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFP4310ZPBF Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 100 volts 100 volts
PD 280000 milliwatts 280000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
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