MOSFET N-CH 150V 43A TO247AC Product overview: IRFP3415PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150V, 43A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 150V, 43A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFP3415PBF can be used for catalog matching and distributor lookup.
Manufacturer: Infineon Technologies
Win Source Part Number: 1187786-IRFP3415PBF
Packaging: Bulk
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-247-3
Power Dissipation (Maximum): 200W
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 400
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 150V
Id - Continuous Drain Current: 43A
Rds On (Maximum) at Id, Vgs: 42mOhm at 22A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 200nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 2400pF at 25V
N-Channel 150V 43A (Tc) 200W (Tc) Through Hole TO-247AC
MOSFET, N-CH, 150V, 43A, 175DEG C, 200W; Transistor Polarity:N Channel; Continuous Drain Current Id:43A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.042ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes
MOSFET N-CH 150V 43A TO247AC
MOSFET, N CHANNEL,150V, 43A, TO-247AC, ON RESISTANCE RDS(ON): 0.042OHM, RDS(ON) TEST VOLTAGE VGS: 10V, THRESHOLD VOLTAGE VGS: 4V, ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
MOSFET MOSFT 150V 43A 42mOhm 144.4nCAC
| ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | Win Source Electronics | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | Radwell International | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IRFP3415PBF | 2625481 | 1187786-IRFP3415PBF | IRFP3415PBF-ND | 64AH3709 | IRFP3415PBF | 66790123 | IRFP3415PBF |
| Product Name | 150V 43A MOSFET Transistor | MOSFETs | FETs - Single - IRFP3415PBF | Single FETs, MOSFETs | Mosfet, N-Ch, 150V, 43A, 175Deg C, 200W; Transistor Polarity Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Transistor | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | |||||
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 150 volts | 150 volts | ||||||
| PD | 200 milliwatts | 200000 milliwatts | ||||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |