Infineon Technologies AG N-Channel Power MOSFET IRFP2907

Description
75V Single N-Channel Power MOSFET in a TO-247 package The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design. Summary of Features Planar cell structure for wide SOA Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard Silicon optimized for applications switching below <100kHz Industry standard through-hole power package High current rating Benefits Increased ruggedness Wide availability from distribution partners Industry standard qualification level High performance in low frequency applications Standard pinout allows for drop in replacement High current carrying capability Designers who used this product also designed with IPD122N10N3 G | N-Channel Power MOSFET IRFB4321 | N-Channel Power MOSFET IRFB3077 | N-Channel Power MOSFET IRFB3306 | N-Channel Power MOSFET IPD122N10N3 G | N-Channel Power MOSFET IRFB4321 | N-Channel Power MOSFET IRFB3077 | N-Channel Power MOSFET IRFB3306 | N-Channel Power MOSFET IPD122N10N3 G | N-Channel Power MOSFET IRFB4321 | N-Channel Power MOSFET IRFB3077 | N-Channel Power MOSFET IRFB3306 | N-Channel Power MOSFET
  • N-Channel Power MOSFET - IRFP2907 - Infineon Technologies AG
    Infineon Technologies AG
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Description
75V Single N-Channel Power MOSFET in a TO-247 package The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design. Summary of Features Planar cell structure for wide SOA Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard Silicon optimized for applications switching below <100kHz Industry standard through-hole power package High current rating Benefits Increased ruggedness Wide availability from distribution partners Industry standard qualification level High performance in low frequency applications Standard pinout allows for drop in replacement High current carrying capability Designers who used this product also designed with IPD122N10N3 G | N-Channel Power MOSFET IRFB4321 | N-Channel Power MOSFET IRFB3077 | N-Channel Power MOSFET IRFB3306 | N-Channel Power MOSFET IPD122N10N3 G | N-Channel Power MOSFET IRFB4321 | N-Channel Power MOSFET IRFB3077 | N-Channel Power MOSFET IRFB3306 | N-Channel Power MOSFET IPD122N10N3 G | N-Channel Power MOSFET IRFB4321 | N-Channel Power MOSFET IRFB3077 | N-Channel Power MOSFET IRFB3306 | N-Channel Power MOSFET
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Datasheet
Datasheet Summary
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IRFP2907PbF is a 75V N-channel Power MOSFET in a TO-247AC package, designed for high-current switching applications such as telecom systems requiring soft start. It has a maximum continuous drain current of 209A at 25°C and 148A at 100°C, with a maximum on-resistance of 4.5mΩ at 10V gate-source voltage. The device supports repetitive avalanche energy up to the maximum junction temperature, with a peak diode recovery dv/dt rating of 5.0V/ns. It operates from -55°C to +175°C, with a thermal resistance junction-to-case of 0.32°C/W and a power dissipation rating of 470W. The part is lead-free and meets industry standards for ruggedness and thermal performance.

Datasheet Summary
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IRFP2907PbF is a 75V N-channel Power MOSFET in a TO-247AC package, designed for high-current switching applications such as telecom systems requiring soft start. It has a maximum continuous drain current of 209A at 25°C and 148A at 100°C, with a maximum on-resistance of 4.5mΩ at 10V gate-source voltage. The device supports repetitive avalanche energy up to the maximum junction temperature, with a peak diode recovery dv/dt rating of 5.0V/ns. It operates from -55°C to +175°C, with a thermal resistance junction-to-case of 0.32°C/W and a power dissipation rating of 470W. The part is lead-free and meets industry standards for ruggedness and thermal performance.

Suppliers

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N-Channel Power MOSFET - IRFP2907 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
N-Channel Power MOSFET
IRFP2907
N-Channel Power MOSFET IRFP2907
75V Single N-Channel Power MOSFET in a TO-247 package The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design. Summary of Features Planar cell structure for wide SOA Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard Silicon optimized for applications switching below <100kHz Industry standard through-hole power package High current rating Benefits Increased ruggedness Wide availability from distribution partners Industry standard qualification level High performance in low frequency applications Standard pinout allows for drop in replacement High current carrying capability Designers who used this product also designed with IPD122N10N3 G | N-Channel Power MOSFET IRFB4321 | N-Channel Power MOSFET IRFB3077 | N-Channel Power MOSFET IRFB3306 | N-Channel Power MOSFET IPD122N10N3 G | N-Channel Power MOSFET IRFB4321 | N-Channel Power MOSFET IRFB3077 | N-Channel Power MOSFET IRFB3306 | N-Channel Power MOSFET IPD122N10N3 G | N-Channel Power MOSFET IRFB4321 | N-Channel Power MOSFET IRFB3077 | N-Channel Power MOSFET IRFB3306 | N-Channel Power MOSFET

75V Single N-Channel Power MOSFET in a TO-247 package

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.


Summary of Features

  • Planar cell structure for wide SOA
  • Optimized for broadest availability from distribution partners
  • Product qualification according to JEDEC standard
  • Silicon optimized for applications switching below <100kHz
  • Industry standard through-hole power package
  • High current rating

Benefits

  • Increased ruggedness
  • Wide availability from distribution partners
  • Industry standard qualification level
  • High performance in low frequency applications
  • Standard pinout allows for drop in replacement
  • High current carrying capability

Designers who used this product also designed with


  • IPD122N10N3 G |
    N-Channel Power MOSFET
  • IRFB4321 |
    N-Channel Power MOSFET
  • IRFB3077 |
    N-Channel Power MOSFET
  • IRFB3306 |
    N-Channel Power MOSFET
  • IPD122N10N3 G |
    N-Channel Power MOSFET
  • IRFB4321 |
    N-Channel Power MOSFET
  • IRFB3077 |
    N-Channel Power MOSFET
  • IRFB3306 |
    N-Channel Power MOSFET
  • IPD122N10N3 G |
    N-Channel Power MOSFET
  • IRFB4321 |
    N-Channel Power MOSFET
  • IRFB3077 |
    N-Channel Power MOSFET
  • IRFB3306 |
    N-Channel Power MOSFET
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IRFP2907
Product Name N-Channel Power MOSFET
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0045 ohms
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