The IRFP260MPbF is a fifth-generation HEXFET® power MOSFET designed for high-efficiency switching applications, featuring a TO-247 package with a case size of 16.00 x 20.50 x 20.80 mm. It has a drain-source breakdown voltage of 200 V, a continuous drain current of 50 A at 25°C, and a maximum on-resistance of 0.04 Ω at VGS = 10 V and ID = 28 A. The device operates at a maximum junction temperature of 175°C, is fully avalanche-rated with a single-pulse avalanche energy of 560 mJ, and supports easy paralleling. Its gate-source voltage rating is ±20 V, and it meets RoHS standards. Thermal resistance from junction to case is 0.50°C/W, and junction-to-ambient thermal resistance is 40°C/W.
Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:50A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:300W; No. of Pins:3Pins RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Transistors |
| Product Number | 27AC6801 |
| Product Name | Channel Type Infineon |
| Package Type | TO-3 |
