N-Channel 55V 110A (Tc) 200W (Tc) Through Hole TO-247AC
Manufacturer: Infineon Technologies
Win Source Part Number: 017623-IRFP064NPBF
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 200W (Tc)
Family Name: IRFP064
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-247AC
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 110A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 170nC @ 10V
Max Input Capacitance: 4000pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8 mOhm @ 59A, 10V
Alternative Parts (Cross-Reference): NTE2913; HUFA75344G3T; HUFA75344G3;
Introduction Date: February 11, 2004
ECCN: EAR99
Country of Origin: China, Mexico
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Sufficient
MOSFET N-CH 55V 110A TO247AC Product overview: IRFP064NPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 110A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 110A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFP064NPBF can be used for catalog matching and distributor lookup.
MOSFET N-Channel 55V 110A HEXFET TO247AC
MOSFET N-Channel 55V 110A HEXFET TO247AC
IRFP064 - 12V-300V N-CHANNEL POW
MOSFET N-CH 55V 110A TO247AC
N CHANNEL MOSFET, 55V, 110A, TO-247AC; Channel Type:N Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:110A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 110A, 55V, 0.008OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-247AC. FREE 2 YEAR RADWELL WARRANTY
POWER FIELD-EFFECT TRANSISTOR, 110A, 55V, 0.008OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-247AC. FREE 2 YEAR RADWELL WARRANTY
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.008Ohm;ID 110A;TO-247AC;PD 200W;VGS +/-20V
MOSFET MOSFT 55V 98A 8mOhm 113.3nCAC
55V 110A 8mΩ@10V,59A 200W 4V@250uA N Channel TO-247AC-3 MOSFETs ROHS
MOSFET N-CH 55V 110A TO247AC
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | ODG (Origin Data Global) | Newark, An Avnet Company | Radwell International | Allied Electronics, Inc. | VAST STOCK CO., LIMITED | LCSC Electronics Technology (HK) Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IRFP064NPBF-ND | 017623-IRFP064NPBF | 278-IRFP064NPBF | 5410008 | IRFP064NPBF | 63J6841 | 17603014 | 70017032 | IRFP064NPBF | IRFP064NPBF | IRFP064NPBF |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFP064NPBF | 55V 110A MOSFET Transistor | MOSFETs | Single FETs, MOSFETs | N Channel Mosfet, 55V, 110A, To-247Ac; Channel Type Infineon | Transistor | MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.008Ohm;ID 110A;TO-247AC;PD 200W;VGS +/-20V | MOSFET | Triode/MOS Tube/Transistor >> MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | |||
| Package Type | TO-247; TO-247-3 | TO-247; SOT3; TO-247AC | Tube | TO-247; To-247ac | TO-247; TO-247-3 | TO-3; TO-247 | TO-247 | TO-247 | TO-247; TO-247-3 | ||
| V(BR)DSS | 55 volts | 55 volts | 55 volts | 55 volts | 55 volts | ||||||
| PD | 200000 milliwatts | 200 milliwatts | 200000 milliwatts | 200000 milliwatts | 200000 milliwatts | ||||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
