Manufacturer: Infineon Technologies
Win Source Part Number: 132845-IRFP044NPBF
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 120W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-247AC
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 53A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 61nC @ 10V
Max Input Capacitance: 1500pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 20 mOhm @ 29A, 10V
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Balance
N-Channel 55V 53A (Tc) 120W (Tc) Through Hole TO-247AC
MOSFET N-CH 55V 53A TO247AC Product overview: IRFP044NPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 53A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 53A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFP044NPBF can be used for catalog matching and distributor lookup.
MOSFET MOSFT 55V 49A 20mOhm 40.7nCAC
DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 53A I(D), 55V, 0.02OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-247AC. FREE 2 YEAR RADWELL WARRANTY
DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 53A I(D), 55V, 0.02OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-247AC. FREE 2 YEAR RADWELL WARRANTY
N CHANNEL MOSFET, 55V, 53A TO-247AC; Channel Type:N Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:53A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
MOSFET N-CH 55V 53A TO247AC
MOSFET N-CH 55V 53A TO247AC
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.02Ohm;ID 53A;TO-247AC;PD 120W;VGS +/-20V
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Radwell International | Newark, An Avnet Company | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Allied Electronics, Inc. | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 132845-IRFP044NPBF | IRFP044NPBF-ND | 278-IRFP044NPBF | IRFP044NPBF | 17632873 | 63J6833 | IRFP044NPBF | IRFP044NPBF | 70017030 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFP044NPBF | Single FETs, MOSFETs | 55V 53A MOSFET Transistor | MOSFET | Transistor | N Channel Mosfet, 55V, 53A To-247Ac; Channel Type Infineon | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.02Ohm;ID 53A;TO-247AC;PD 120W;VGS +/-20V |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||||
| V(BR)DSS | 55 volts | 55 volts | 55 volts | ||||||
| PD | 120000 milliwatts | 120000 milliwatts | 120000 milliwatts | 120000 milliwatts | |||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||||||
| Package Type | TO-247; SOT3; TO-247AC | TO-247; TO-247-3 | Tube | TO-3; TO-247 | TO-247; TO-247-3 | TO-247; TO-247-3 | TO-247 |
