-200V Single P-Channel Hi-Rel MOSFET in a SMD-1 package - A IRFN9240 with Hermetic Packaging
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Manufacturer: Infineon Technologies
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1026635-IRFN9240
Termination: SMD/SMT
Mounting: SMD (SMT)
Drain to Source Voltage (Vdss): 200 V
Number of Elements: 1
Power Dissipation: 125 W
Number of Pins: 3
Categories: Transistors - FETs, MOSFETs - RF
Alternative Parts (Cross-Reference): IRFN9140; BTS112AE3045ANTMA1; IRF5N4905; IRFN240; SI5468DC-T1-GE3; SI5902BDC-T1-GE3;
Popularity: Low
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 150 °C
Lead Free: Contains Lead
Mount: Surface Mount
RoHS: Compliant
Radiation Hardening: No
Min Operating Temperature: -55 °C
Schedule B: 8541290080
Continuous Drain Current (ID): -7 A
Drain to Source Breakdown Voltage: -200 V
Drain to Source Resistance: 510 mΩ
Gate to Source Voltage (Vgs): 20 V
On-State Resistance: 500 mΩ
| Infineon Technologies AG | Win Source Electronics | |
|---|---|---|
| Product Category | Power MOSFET | Power MOSFET |
| Product Number | IRFN9240 | 1026635-IRFN9240 |
| Product Name | High Reliability - Defense - Power - HiRel MOSFETs - Single channel high reliability power MOSFETs - IRFN9240 | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFN9240 |
| Polarity | P-Channel; P | |
| Package Type | C-CCN-3 | SOT3 |
| Packing Method | Tray; TRAY | |
| V(BR)DSS | -200 volts |