IRFM250 is a hermetically sealed, N-channel Power MOSFET in a TO-254AA package, designed for high-reliability applications such as DC-DC converters and motor drives. It has a drain-source breakdown voltage of 200V, a continuous drain current of 27.4A at 25°C, and a maximum on-state resistance of 100mΩ. The device supports a peak pulsed drain current of 110A, a maximum power dissipation of 150W, and a gate-source voltage rating of ±20V. It is qualified to MIL-PRF-19500/592 with a typical weight of 9.3g and operates within a junction temperature range of -55°C to +150°C. The TO-254AA package provides electrically isolated mounting with ceramic eyelets.
200V Single N-Channel Hi-Rel MOSFET in a TO-254AA package - A IRFM250 with Hermetic Packaging
Benefits
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| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IRFM250 |
| Product Name | High Reliability - Defense - Power - HiRel MOSFETs - Single channel high reliability power MOSFETs - IRFM250 |
| Polarity | N-Channel; N |
