Infineon Technologies AG High Reliability - Defense - Power - HiRel MOSFETs - Single channel high reliability power MOSFETs - IRFM054 IRFM054

Description
60V Single N-Channel Hi-Rel MOSFET in a TO-254AA package - A IRFM054 with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts IRFM054 A IRFM054 with Hermetic Packaging IRFM054SCX Screening Level TX
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Description
60V Single N-Channel Hi-Rel MOSFET in a TO-254AA package - A IRFM054 with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts IRFM054 A IRFM054 with Hermetic Packaging IRFM054SCX Screening Level TX
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Datasheet
Datasheet Summary
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The IRFM054 is a hermetically sealed, N-channel power MOSFET in a TO-254AA package, designed for high-reliability applications such as DC-DC converters and motor drives. It has a drain-to-source breakdown voltage of 60V, a continuous drain current of 35A, and a maximum on-state resistance of 27mΩ at 25°C. The device features a total gate charge of 180nC and is rated for a peak pulsed drain current of 220A. It supports a maximum power dissipation of 150W and has a junction-to-case thermal resistance of 0.83°C/W. The part is qualified to a JANTX-equivalent screening flow per MIL-PRF-19500 and has a weight of 9.3g. The TO-254AA package provides electrical isolation from the heatsink, eliminating the need for additional insulating materials.

Datasheet Summary
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The IRFM054 is a hermetically sealed, N-channel power MOSFET in a TO-254AA package, designed for high-reliability applications such as DC-DC converters and motor drives. It has a drain-to-source breakdown voltage of 60V, a continuous drain current of 35A, and a maximum on-state resistance of 27mΩ at 25°C. The device features a total gate charge of 180nC and is rated for a peak pulsed drain current of 220A. It supports a maximum power dissipation of 150W and has a junction-to-case thermal resistance of 0.83°C/W. The part is qualified to a JANTX-equivalent screening flow per MIL-PRF-19500 and has a weight of 9.3g. The TO-254AA package provides electrical isolation from the heatsink, eliminating the need for additional insulating materials.

Suppliers

Company
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Description
Supplier Links
High Reliability - Defense - Power - HiRel MOSFETs - Single channel high reliability power MOSFETs - IRFM054 - IRFM054 - Infineon Technologies AG
Neubiberg, Germany
High Reliability - Defense - Power - HiRel MOSFETs - Single channel high reliability power MOSFETs - IRFM054
IRFM054
High Reliability - Defense - Power - HiRel MOSFETs - Single channel high reliability power MOSFETs - IRFM054 IRFM054
60V Single N-Channel Hi-Rel MOSFET in a TO-254AA package - A IRFM054 with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts IRFM054 A IRFM054 with Hermetic Packaging IRFM054SCX Screening Level TX

60V Single N-Channel Hi-Rel MOSFET in a TO-254AA package - A IRFM054 with Hermetic Packaging

Benefits

  • Hermetically packaged power MOSFET
  • Packaged on a MIL-PRF-19500 manufacturing line

Similar Parts

IRFM054

A IRFM054 with Hermetic Packaging

IRFM054SCX

Screening Level TX

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFM054 - 1065559-IRFM054 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFM054
1065559-IRFM054
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFM054 1065559-IRFM054
Manufacturer: Infineon Technologies Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1065559-IRFM054 Drain to Source Voltage (Vdss): 60 V Number of Elements: 1 Power Dissipation: 150 W Number of Pins: 3 Categories: Transistors - FETs, MOSFETs - RF Alternative Parts (Cross-Reference): RFP45N06; IRFB3806PBF; IPP060N06NAKSA1; IRFIZ48GPBF; STP45NF06; IRFSL3806PBF; Popularity: Low Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Lead Free: Contains Lead Mount: Through Hole RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -55 °C Continuous Drain Current (ID): 35 A Drain to Source Breakdown Voltage: 60 V Drain to Source Resistance: 27 mΩ Gate to Source Voltage (Vgs): 20 V

Manufacturer: Infineon Technologies
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1065559-IRFM054
Drain to Source Voltage (Vdss): 60 V
Number of Elements: 1
Power Dissipation: 150 W
Number of Pins: 3
Categories: Transistors - FETs, MOSFETs - RF
Alternative Parts (Cross-Reference): RFP45N06; IRFB3806PBF; IPP060N06NAKSA1; IRFIZ48GPBF; STP45NF06; IRFSL3806PBF;
Popularity: Low
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 150 °C
Lead Free: Contains Lead
Mount: Through Hole
RoHS: Compliant
Radiation Hardening: No
Min Operating Temperature: -55 °C
Continuous Drain Current (ID): 35 A
Drain to Source Breakdown Voltage: 60 V
Drain to Source Resistance: 27 mΩ
Gate to Source Voltage (Vgs): 20 V

Buy Now
Singapore, Singapore
60V 35A MOSFET Transistor
278-IRFM054
60V 35A MOSFET Transistor 278-IRFM054
Trans MOSFET N-CH 60V 35A 3-Pin(3+Tab) TO-254AA Product overview: IRFM054 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 35A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 35A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFM054 can be used for catalog matching and distributor lookup.

Trans MOSFET N-CH 60V 35A 3-Pin(3+Tab) TO-254AA Product overview: IRFM054 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 35A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 35A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFM054 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG Win Source Electronics ERSAELECTRONICS PTE. LTD.
Product Category Power MOSFET Power MOSFET Metal-Oxide Semiconductor FET (MOSFET)
Product Number IRFM054 1065559-IRFM054 278-IRFM054
Product Name High Reliability - Defense - Power - HiRel MOSFETs - Single channel high reliability power MOSFETs - IRFM054 TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFM054 60V 35A MOSFET Transistor
Polarity N-Channel; N
Package Type M-TO254-3 SOT3
V(BR)DSS 60 volts 60 volts
rDS(on) 0.0270 ohms
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