Infineon Technologies AG FETs - Single - IRFL4315PBF IRFL4315PBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 731459-IRFL4315PBF Packaging: Tube Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: SOT-223 Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: TO-261-4, TO-261AA Power Dissipation (Maximum): 2.8W Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1,760 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 150V Id - Continuous Drain Current: 2.6A Rds On (Maximum) at Id, Vgs: 185mOhm at 1.6A, 10V Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 19nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 420pF at 25V
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 731459-IRFL4315PBF Packaging: Tube Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: SOT-223 Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: TO-261-4, TO-261AA Power Dissipation (Maximum): 2.8W Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1,760 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 150V Id - Continuous Drain Current: 2.6A Rds On (Maximum) at Id, Vgs: 185mOhm at 1.6A, 10V Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 19nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 420pF at 25V
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Suppliers

Company
Product
Description
Supplier Links
FETs - Single - IRFL4315PBF - 731459-IRFL4315PBF - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IRFL4315PBF
731459-IRFL4315PBF
FETs - Single - IRFL4315PBF 731459-IRFL4315PBF
Manufacturer: Infineon Technologies Win Source Part Number: 731459-IRFL4315PBF Packaging: Tube Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: SOT-223 Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: TO-261-4, TO-261AA Power Dissipation (Maximum): 2.8W Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1,760 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 150V Id - Continuous Drain Current: 2.6A Rds On (Maximum) at Id, Vgs: 185mOhm at 1.6A, 10V Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 19nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 420pF at 25V

Manufacturer: Infineon Technologies
Win Source Part Number: 731459-IRFL4315PBF
Packaging: Tube
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: TO-261-4, TO-261AA
Power Dissipation (Maximum): 2.8W
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 1,760
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 150V
Id - Continuous Drain Current: 2.6A
Rds On (Maximum) at Id, Vgs: 185mOhm at 1.6A, 10V
Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 19nC at 10V
Gate Source Voltage (Maximum): ±30V
Input Capacitance (Ciss) (Maximum) at Vds: 420pF at 25V

Buy Now
Single FETs, MOSFETs - IRFL4315PBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFL4315PBF-ND
Single FETs, MOSFETs IRFL4315PBF-ND
N-Channel 150V 2.6A (Ta) 2.8W (Ta) Surface Mount SOT-223

N-Channel 150V 2.6A (Ta) 2.8W (Ta) Surface Mount SOT-223

Buy Now Datasheet
Singapore
150V 2.6A MOSFET Transistor
278-IRFL4315PBF
150V 2.6A MOSFET Transistor 278-IRFL4315PBF
MOSFET N-CH 150V 2.6A SOT223 Product overview: IRFL4315PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150V, 2.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 150V, 2.6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFL4315PBF can be used for catalog matching and distributor lookup.

MOSFET N-CH 150V 2.6A SOT223 Product overview: IRFL4315PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150V, 2.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 150V, 2.6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFL4315PBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - IRFL4315PBF - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRFL4315PBF
Single FETs, MOSFETs IRFL4315PBF
HEXFET POWER MOSFET

HEXFET POWER MOSFET

Supplier's Site Datasheet
Single FETs, MOSFETs - IRFL4315PBF - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRFL4315PBF
Single FETs, MOSFETs IRFL4315PBF
MOSFET N-CH 150V 2.6A SOT223

MOSFET N-CH 150V 2.6A SOT223

Supplier's Site Datasheet
MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 185 Milliohms;ID 2.6A;SOT-223;PD 2.8W;-55de - 70017029 - Allied Electronics, Inc.
Fort Worth, TX, USA
MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 185 Milliohms;ID 2.6A;SOT-223;PD 2.8W;-55de
70017029
MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 185 Milliohms;ID 2.6A;SOT-223;PD 2.8W;-55de 70017029
MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 185 Milliohms;ID 2.6A;SOT-223;PD 2.8W;-55de

MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 185 Milliohms;ID 2.6A;SOT-223;PD 2.8W;-55de

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFL4315PBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFL4315PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFL4315PBF
MOSFET N-CH 150V 2.6A SOT223

MOSFET N-CH 150V 2.6A SOT223

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) Allied Electronics, Inc. Shenzhen Shengyu Electronics Technology Limited
Product Category Power MOSFET Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 731459-IRFL4315PBF IRFL4315PBF-ND 278-IRFL4315PBF IRFL4315PBF 70017029 IRFL4315PBF
Product Name FETs - Single - IRFL4315PBF Single FETs, MOSFETs 150V 2.6A MOSFET Transistor Single FETs, MOSFETs MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 185 Milliohms;ID 2.6A;SOT-223;PD 2.8W;-55de Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 150 volts 150 volts 150 volts
QG 19 nC
PD 2800 milliwatts 2800 milliwatts 2800 milliwatts 2800 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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