Infineon Technologies AG N-Channel Power MOSFET IRFL4315

Description
150V Single N-Channel IR MOSFET in a SOT-223 package The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design. Summary of Features Planar cell structure for wide SOA Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard Silicon optimized for applications switching below <100kHz Industry standard surface mount package Benefits Increased ruggedness Wide availability from distribution partners Industry standard qualification level High performance in low frequency applications Standard pinout allows for drop in replacement Applications Cordless power tools and outdoor power equipment Designers who used this product also designed with BAS3005B-02V | Schottky Diodes IPD320N20N3 G | N-Channel Power MOSFET IPT030N12N3 G | N-Channel Power MOSFET BAS3005B-02V | Schottky Diodes IPD320N20N3 G | N-Channel Power MOSFET IPT030N12N3 G | N-Channel Power MOSFET BAS3005B-02V | Schottky Diodes IPD320N20N3 G | N-Channel Power MOSFET IPT030N12N3 G | N-Channel Power MOSFET
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Description
150V Single N-Channel IR MOSFET in a SOT-223 package The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design. Summary of Features Planar cell structure for wide SOA Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard Silicon optimized for applications switching below <100kHz Industry standard surface mount package Benefits Increased ruggedness Wide availability from distribution partners Industry standard qualification level High performance in low frequency applications Standard pinout allows for drop in replacement Applications Cordless power tools and outdoor power equipment Designers who used this product also designed with BAS3005B-02V | Schottky Diodes IPD320N20N3 G | N-Channel Power MOSFET IPT030N12N3 G | N-Channel Power MOSFET BAS3005B-02V | Schottky Diodes IPD320N20N3 G | N-Channel Power MOSFET IPT030N12N3 G | N-Channel Power MOSFET BAS3005B-02V | Schottky Diodes IPD320N20N3 G | N-Channel Power MOSFET IPT030N12N3 G | N-Channel Power MOSFET
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Suppliers

Company
Product
Description
Supplier Links
N-Channel Power MOSFET - IRFL4315 - Infineon Technologies AG
Neubiberg, Germany
N-Channel Power MOSFET
IRFL4315
N-Channel Power MOSFET IRFL4315
150V Single N-Channel IR MOSFET in a SOT-223 package The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design. Summary of Features Planar cell structure for wide SOA Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard Silicon optimized for applications switching below <100kHz Industry standard surface mount package Benefits Increased ruggedness Wide availability from distribution partners Industry standard qualification level High performance in low frequency applications Standard pinout allows for drop in replacement Applications Cordless power tools and outdoor power equipment Designers who used this product also designed with BAS3005B-02V | Schottky Diodes IPD320N20N3 G | N-Channel Power MOSFET IPT030N12N3 G | N-Channel Power MOSFET BAS3005B-02V | Schottky Diodes IPD320N20N3 G | N-Channel Power MOSFET IPT030N12N3 G | N-Channel Power MOSFET BAS3005B-02V | Schottky Diodes IPD320N20N3 G | N-Channel Power MOSFET IPT030N12N3 G | N-Channel Power MOSFET

150V Single N-Channel IR MOSFET in a SOT-223 package

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.


Summary of Features

  • Planar cell structure for wide SOA
  • Optimized for broadest availability from distribution partners
  • Product qualification according to JEDEC standard
  • Silicon optimized for applications switching below <100kHz
  • Industry standard surface mount package

Benefits

  • Increased ruggedness
  • Wide availability from distribution partners
  • Industry standard qualification level
  • High performance in low frequency applications
  • Standard pinout allows for drop in replacement

Applications

  • Cordless power tools and outdoor power equipment

Designers who used this product also designed with


  • BAS3005B-02V |
    Schottky Diodes
  • IPD320N20N3 G |
    N-Channel Power MOSFET
  • IPT030N12N3 G |
    N-Channel Power MOSFET
  • BAS3005B-02V |
    Schottky Diodes
  • IPD320N20N3 G |
    N-Channel Power MOSFET
  • IPT030N12N3 G |
    N-Channel Power MOSFET
  • BAS3005B-02V |
    Schottky Diodes
  • IPD320N20N3 G |
    N-Channel Power MOSFET
  • IPT030N12N3 G |
    N-Channel Power MOSFET
Supplier's Site Datasheet
FETs - Single - IRFL4315 - 1187730-IRFL4315 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IRFL4315
1187730-IRFL4315
FETs - Single - IRFL4315 1187730-IRFL4315
Manufacturer: Infineon Technologies Win Source Part Number: 1187730-IRFL4315 Packaging: Tube Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: SOT-223 Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-261-4, TO-261AA Power Dissipation (Maximum): 2.8W Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 80 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 150V Id - Continuous Drain Current: 2.6A Rds On (Maximum) at Id, Vgs: 185mOhm at 1.6A, 10V Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 19nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 420pF at 25V

Manufacturer: Infineon Technologies
Win Source Part Number: 1187730-IRFL4315
Packaging: Tube
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-261-4, TO-261AA
Power Dissipation (Maximum): 2.8W
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 80
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 150V
Id - Continuous Drain Current: 2.6A
Rds On (Maximum) at Id, Vgs: 185mOhm at 1.6A, 10V
Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 19nC at 10V
Gate Source Voltage (Maximum): ±30V
Input Capacitance (Ciss) (Maximum) at Vds: 420pF at 25V

Buy Now
Single FETs, MOSFETs - IRFL4315-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFL4315-ND
Single FETs, MOSFETs IRFL4315-ND
N-Channel 150V 2.6A (Ta) 2.8W (Ta) Surface Mount SOT-223

N-Channel 150V 2.6A (Ta) 2.8W (Ta) Surface Mount SOT-223

Buy Now Datasheet
Single FETs, MOSFETs - IRFL4315 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRFL4315
Single FETs, MOSFETs IRFL4315
MOSFET N-CH 150V 2.6A SOT223

MOSFET N-CH 150V 2.6A SOT223

Supplier's Site Datasheet
Singapore
150V 2.6A MOSFET Transistor
278-IRFL4315
150V 2.6A MOSFET Transistor 278-IRFL4315
MOSFET N-CH 150V 2.6A SOT223 Product overview: IRFL4315 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150V, 2.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 150V, 2.6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFL4315 can be used for catalog matching and distributor lookup.

MOSFET N-CH 150V 2.6A SOT223 Product overview: IRFL4315 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150V, 2.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 150V, 2.6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFL4315 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Integrated Circuits (ICs) - Transistors - MOSFETs - IRFL4315 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Transistors - MOSFETs
IRFL4315
Integrated Circuits (ICs) - Transistors - MOSFETs IRFL4315
Integrated Circuits (ICs) - Transistors - MOSFETs

Integrated Circuits (ICs) - Transistors - MOSFETs

Supplier's Site

Technical Specifications

  Infineon Technologies AG Win Source Electronics DigiKey ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IRFL4315 1187730-IRFL4315 IRFL4315-ND IRFL4315 278-IRFL4315 IRFL4315
Product Name N-Channel Power MOSFET FETs - Single - IRFL4315 Single FETs, MOSFETs Single FETs, MOSFETs 150V 2.6A MOSFET Transistor Integrated Circuits (ICs) - Transistors - MOSFETs
Polarity N-Channel; N N-Channel; N-Channel N-Channel N-Channel; N-Channel
Transistor Technology / Material Si/SiC MOSFET (Metal Oxide)
rDS(on) 0.1850 ohms
TJ 150 C (302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT223; SOT223 SOT3 SOT223; TO-261-4, TO-261AA SOT223; TO-261-4, TO-261AA Tube
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