Infineon Technologies AG 55V 2.8A MOSFET Transistor IRFL024N

MOSFET N-CH 55V 2.8A SOT223 Product overview: IRFL024N from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 2.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 2.8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFL024N can be used for catalog matching and distributor lookup.

N-Channel 55V 2.8A (Ta) 1W (Ta) Surface Mount SOT-223

Manufacturer: Infineon Technologies
Win Source Part Number: 1187716-IRFL024N
Packaging: Tube
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-261-4, TO-261AA
Power Dissipation (Maximum): 1W
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 80
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 55V
Id - Continuous Drain Current: 2.8A
Rds On (Maximum) at Id, Vgs: 75mOhm at 2.8A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 18.3nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 400pF at 25V