Infineon Technologies AG Single FETs, MOSFETs IRFL024N

Description
N-Channel 55V 2.8A (Ta) 1W (Ta) Surface Mount SOT-223
Request a Quote Datasheet
Description
N-Channel 55V 2.8A (Ta) 1W (Ta) Surface Mount SOT-223
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRFL024N-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFL024N-ND
Single FETs, MOSFETs IRFL024N-ND
N-Channel 55V 2.8A (Ta) 1W (Ta) Surface Mount SOT-223

N-Channel 55V 2.8A (Ta) 1W (Ta) Surface Mount SOT-223

Buy Now Datasheet
Singapore, Singapore
55V 2.8A MOSFET Transistor
278-IRFL024N
55V 2.8A MOSFET Transistor 278-IRFL024N
MOSFET N-CH 55V 2.8A SOT223 Product overview: IRFL024N from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 2.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 2.8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFL024N can be used for catalog matching and distributor lookup.

MOSFET N-CH 55V 2.8A SOT223 Product overview: IRFL024N from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 2.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 2.8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFL024N can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
FETs - Single - IRFL024N - 1187716-IRFL024N - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IRFL024N
1187716-IRFL024N
FETs - Single - IRFL024N 1187716-IRFL024N
Manufacturer: Infineon Technologies Win Source Part Number: 1187716-IRFL024N Packaging: Tube Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: SOT-223 Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: TO-261-4, TO-261AA Power Dissipation (Maximum): 1W Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 80 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 55V Id - Continuous Drain Current: 2.8A Rds On (Maximum) at Id, Vgs: 75mOhm at 2.8A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 18.3nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 400pF at 25V

Manufacturer: Infineon Technologies
Win Source Part Number: 1187716-IRFL024N
Packaging: Tube
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-261-4, TO-261AA
Power Dissipation (Maximum): 1W
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 80
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 55V
Id - Continuous Drain Current: 2.8A
Rds On (Maximum) at Id, Vgs: 75mOhm at 2.8A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 18.3nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 400pF at 25V

Buy Now
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFL024N - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFL024N
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFL024N
MOSFET N-CH 55V 2.8A SOT223

MOSFET N-CH 55V 2.8A SOT223

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET RF Transistors
Product Number IRFL024N-ND 278-IRFL024N 1187716-IRFL024N IRFL024N
Product Name Single FETs, MOSFETs 55V 2.8A MOSFET Transistor FETs - Single - IRFL024N Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type SOT223; TO-261-4, TO-261AA Tube SOT3 TO-261-4, TO-261AA
PD 1000 milliwatts 1000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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