Manufacturer: Infineon Technologies
Win Source Part Number: 040722-IRFIZ34NPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 37W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB Full-Pak
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 21A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 34nC @ 10V
Max Input Capacitance: 700pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 40 mOhm @ 11A, 10V
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Limited
N-Channel 55V 21A (Tc) 37W (Tc) Through Hole TO-220AB Full-Pak
MOSFET N-CH 55V 21A TO220AB FP
MOSFET N-CH 55V 21A TO220AB FP Product overview: IRFIZ34NPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 21A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 21A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFIZ34NPBF can be used for catalog matching and distributor lookup.
TRANSISTOR, MOSFET, N-CHANNEL, 55V, 19A, 31W, TO-220-3. FREE 2 YEAR RADWELL WARRANTY
MOSFET MOSFT 55V 19A 40mOhm 22.7nC
MOSFET N-CH 55V 21A TO220AB FP
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Radwell International | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 040722-IRFIZ34NPBF | IRFIZ34NPBF-ND | IRFIZ34NPBF | 278-IRFIZ34NPBF | 17403762 | IRFIZ34NPBF | IRFIZ34NPBF |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFIZ34NPBF | Single FETs, MOSFETs | Single FETs, MOSFETs | 55V 21A MOSFET Transistor | Transistor | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | ||||
| V(BR)DSS | 55 volts | 55 volts | 55 volts | ||||
| PD | 37000 milliwatts | 37000 milliwatts | 37000 milliwatts | ||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||||
| Package Type | TO-220; SOT3; TO-220AB Full-Pak | TO-220; TO-220-3 Full Pack | TO-220; TO-220-3 Full Pack | Tube | -55degC ~ 175degC (TJ) |