MOSFET N-CH 100V 12A TO220AB FP Product overview: IRFI530NPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 12A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 12A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFI530NPBF can be used for catalog matching and distributor lookup.
N-Channel 100V 12A (Tc) 41W (Tc) Through Hole TO-220AB Full-Pak
Manufacturer: Infineon Technologies
Win Source Part Number: 1046935-IRFI530NPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 41W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB Full-Pak
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 12A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 44nC @ 10V
Max Input Capacitance: 640pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 110 mOhm @ 6.6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Balance
MOSFET MOSFT 100V 11A 110mOhm 29.3nC
MOSFET Transistor, N Channel, 11 A, 100 V, 0.11 ohm, 10 V, 4 V RoHS Compliant: Yes
TRANSISTOR, MOSFET, N-CHANNEL, 100V, 12A, 0.11 OHM, TO-220AB, THROUGH HOLE, ROHS3 COMPLIANT. FREE 2 YEAR RADWELL WARRANTY
MOSFET N-CH 100V 12A TO220AB FP
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Radwell International | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors |
| Product Number | 278-IRFI530NPBF | IRFI530NPBF-ND | 1046935-IRFI530NPBF | IRFI530NPBF | 97K2003 | 66790007 | IRFI530NPBF |
| Product Name | 100V 12A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFI530NPBF | MOSFET | Mosfet Transistor, N Channel, 11 A, 100 V, 0.11 Ohm, 10 V, 4 V Rohs Compliant Infineon | Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 100 volts | 100 volts | |||||
| PD | 33 milliwatts | 41000 milliwatts |