The IRFI3205PbF is a fifth-generation HEXFET N-channel power MOSFET designed for high-efficiency switching applications. It is packaged in a TO-220 Full-Pak case, which provides built-in electrical isolation equivalent to a 100-micron mica barrier and supports a 2.5 kVRMS isolation voltage. The device has a drain-source breakdown voltage of 55 V, a continuous drain current of 64 A at 25°C, and a maximum on-resistance of 0.008 Ω at 10 V gate-source voltage. It is fully avalanche rated with a single-pulse avalanche energy of 480 mJ and supports peak pulsed drain current up to 390 A. The thermal resistance from junction to case is 2.4 °C/W, and junction temperature operates from -55°C to 175°C. The part is RoHS compliant and not qualified to AEC-Q100 or AEC-Q101 standards.
Channel Type:N Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:64A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:63W; No. of Pins:3Pins; MSL:- RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Transistors |
| Product Number | 29AC7045 |
| Product Name | Channel Type Infineon |
| Package Type | TO-3 |
