MOSFET N-CH 30V 10A 8PQFN Product overview: IRFHM8342TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 10A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 10A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFHM8342TRPBF can be used for catalog matching and distributor lookup.
MOSFET N-CH 30V 10A 8PQFN
N-Channel 30V 10A (Ta) 2.6W (Ta), 20W (Tc) Surface Mount 8-PQFN (3.3x3.3), Power33
Manufacturer: Infineon Technologies
Win Source Part Number: 1046913-IRFHM8342TRP
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.6W (Ta), 20W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-PQFN (3.3x3.3), Power33
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 10A (Ta)
Gate-Source Threshold Voltage: 2.35V @ 25μA
Max Gate Charge: 7.5nC @ 4.5V
Max Input Capacitance: 560pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 16 mOhm @ 17A, 10V
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Balance
MOSFET N-CH 30V 10A 8PQFN
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| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IRFHM8342TRPBF | IRFHM8342TRPBF | IRFHM8342TRPBFTR-ND | 1046913-IRFHM8342TRPBF | IRFHM8342TRPBF | IRFHM8342TRPBF |
| Product Name | 30V 10A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFHM8342TRPBF | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| PD | 2600 milliwatts | 2600 milliwatts | 2600 to 20000 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||
| Package Type | Tape & Reel (TR) | 8-PowerTDFN | 8-PowerTDFN | SOT3; 8-PQFN (3.3x3.3), Power33 | 8-PowerTDFN | |
| Packing Method | Tape & Reel (TR) | Tape Reel; Reel - TR | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR |
