Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFHM8330TRPBF IRFHM8330TRPBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 017605-IRFHM8330TRPB F Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.7W (Ta), 33W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-PQFN (3.3x3.3), Power33 Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 16A (Ta) Gate-Source Threshold Voltage: 2.35V @ 25μA Max Gate Charge: 20nC @ 10V Max Input Capacitance: 1450pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6.6 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFHM8330TRPBF - 017605-IRFHM8330TRPBF - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IRFHM8330TRPBFTR-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFHM8330TRPBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N Channel, 25V, 30A, Pqfn-8; Channel Type Infineon - 45X9500 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Infineon Technologies Win Source Part Number: 017605-IRFHM8330TRPB F Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.7W (Ta), 33W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-PQFN (3.3x3.3), Power33 Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 16A (Ta) Gate-Source Threshold Voltage: 2.35V @ 25μA Max Gate Charge: 20nC @ 10V Max Input Capacitance: 1450pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6.6 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFHM8330TRPBF - 017605-IRFHM8330TRPBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFHM8330TRPBF
017605-IRFHM8330TRPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFHM8330TRPBF 017605-IRFHM8330TRPBF
Manufacturer: Infineon Technologies Win Source Part Number: 017605-IRFHM8330TRPB F Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.7W (Ta), 33W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-PQFN (3.3x3.3), Power33 Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 16A (Ta) Gate-Source Threshold Voltage: 2.35V @ 25μA Max Gate Charge: 20nC @ 10V Max Input Capacitance: 1450pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6.6 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 017605-IRFHM8330TRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.7W (Ta), 33W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-PQFN (3.3x3.3), Power33
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 16A (Ta)
Gate-Source Threshold Voltage: 2.35V @ 25μA
Max Gate Charge: 20nC @ 10V
Max Input Capacitance: 1450pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6.6 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - IRFHM8330TRPBFTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFHM8330TRPBFTR-ND
Single FETs, MOSFETs IRFHM8330TRPBFTR-ND
N-Channel 30V 16A (Ta) 2.7W (Ta), 33W (Tc) Surface Mount 8-PQFN (3.3x3.3), Power33

N-Channel 30V 16A (Ta) 2.7W (Ta), 33W (Tc) Surface Mount 8-PQFN (3.3x3.3), Power33

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFHM8330TRPBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFHM8330TRPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFHM8330TRPBF
MOSFET N-CH 30V 16A 8PQFN

MOSFET N-CH 30V 16A 8PQFN

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IRFHM8330TRPBF
MOSFET IRFHM8330TRPBF
MOSFET 30V SGL N-CH HEXFET Pwr MOSFET

MOSFET 30V SGL N-CH HEXFET Pwr MOSFET

Buy Now Datasheet
Mosfet, N Channel, 25V, 30A, Pqfn-8; Channel Type Infineon - 45X9500 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 25V, 30A, Pqfn-8; Channel Type Infineon
45X9500
Mosfet, N Channel, 25V, 30A, Pqfn-8; Channel Type Infineon 45X9500
MOSFET, N CHANNEL, 25V, 30A, PQFN-8; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:25A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.8V RoHS Compliant: Yes

MOSFET, N CHANNEL, 25V, 30A, PQFN-8; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:25A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.8V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 017605-IRFHM8330TRPBF IRFHM8330TRPBFTR-ND IRFHM8330TRPBF IRFHM8330TRPBF 45X9500
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFHM8330TRPBF Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet, N Channel, 25V, 30A, Pqfn-8; Channel Type Infineon
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 30 volts
PD 2700 to 33000 milliwatts
TJ -55 to 150 C (-67 to 302 F)
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