Manufacturer: Infineon Technologies
Win Source Part Number: 017605-IRFHM8330TRPB
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.7W (Ta), 33W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-PQFN (3.3x3.3), Power33
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 16A (Ta)
Gate-Source Threshold Voltage: 2.35V @ 25μA
Max Gate Charge: 20nC @ 10V
Max Input Capacitance: 1450pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6.6 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Balance
N-Channel 30V 16A (Ta) 2.7W (Ta), 33W (Tc) Surface Mount 8-PQFN (3.3x3.3), Power33
MOSFET 30V SGL N-CH HEXFET Pwr MOSFET
MOSFET N-CH 30V 16A 8PQFN
MOSFET, N CHANNEL, 25V, 30A, PQFN-8; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:25A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.8V RoHS Compliant: Yes
| Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 017605-IRFHM8330TRPBF | IRFHM8330TRPBFTR-ND | IRFHM8330TRPBF | IRFHM8330TRPBF | 45X9500 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFHM8330TRPBF | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N Channel, 25V, 30A, Pqfn-8; Channel Type Infineon |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | ||
| V(BR)DSS | 30 volts | ||||
| PD | 2700 to 33000 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) |
