Infineon Technologies AG FETs - Single - IRFHM830DTRPBF IRFHM830DTRPBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 1187630-IRFHM830DTRP BF Packaging: Tape and Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: PQFN (3x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: 8-VQFN Exposed Pad Power Dissipation (Maximum): 2.8W, 37W Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 4,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 30V Id - Continuous Drain Current: 20A, 40A Rds On (Maximum) at Id, Vgs: 4.3mOhm at 20A, 10V Gate Source Voltage(th) (Maximum) at Id: 2.35V at 50μA Gate Charge (Qg) (Maximum) at Vgs: 27nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 1797pF at 25V
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 1187630-IRFHM830DTRP BF Packaging: Tape and Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: PQFN (3x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: 8-VQFN Exposed Pad Power Dissipation (Maximum): 2.8W, 37W Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 4,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 30V Id - Continuous Drain Current: 20A, 40A Rds On (Maximum) at Id, Vgs: 4.3mOhm at 20A, 10V Gate Source Voltage(th) (Maximum) at Id: 2.35V at 50μA Gate Charge (Qg) (Maximum) at Vgs: 27nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 1797pF at 25V
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Suppliers

Company
Product
Description
Supplier Links
FETs - Single - IRFHM830DTRPBF - 1187630-IRFHM830DTRPBF - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IRFHM830DTRPBF
1187630-IRFHM830DTRPBF
FETs - Single - IRFHM830DTRPBF 1187630-IRFHM830DTRPBF
Manufacturer: Infineon Technologies Win Source Part Number: 1187630-IRFHM830DTRP BF Packaging: Tape and Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: PQFN (3x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: 8-VQFN Exposed Pad Power Dissipation (Maximum): 2.8W, 37W Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 4,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 30V Id - Continuous Drain Current: 20A, 40A Rds On (Maximum) at Id, Vgs: 4.3mOhm at 20A, 10V Gate Source Voltage(th) (Maximum) at Id: 2.35V at 50μA Gate Charge (Qg) (Maximum) at Vgs: 27nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 1797pF at 25V

Manufacturer: Infineon Technologies
Win Source Part Number: 1187630-IRFHM830DTRPBF
Packaging: Tape and Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: PQFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: 8-VQFN Exposed Pad
Power Dissipation (Maximum): 2.8W, 37W
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 4,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 30V
Id - Continuous Drain Current: 20A, 40A
Rds On (Maximum) at Id, Vgs: 4.3mOhm at 20A, 10V
Gate Source Voltage(th) (Maximum) at Id: 2.35V at 50μA
Gate Charge (Qg) (Maximum) at Vgs: 27nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 1797pF at 25V

Buy Now
Singapore
30V 20A 40A MOSFET Transistor
278-IRFHM830DTRPBF
30V 20A 40A MOSFET Transistor 278-IRFHM830DTRPBF
MOSFET N-CH 30V 20A/40A PQFN Product overview: IRFHM830DTRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 20A, 40A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 20A, 40A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFHM830DTRPBF can be used for catalog matching and distributor lookup.

MOSFET N-CH 30V 20A/40A PQFN Product overview: IRFHM830DTRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 20A, 40A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 20A, 40A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFHM830DTRPBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - IRFHM830DTRPBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFHM830DTRPBF-ND
Single FETs, MOSFETs IRFHM830DTRPBF-ND
N-Channel 30V 20A (Ta), 40A (Tc) 2.8W (Ta), 37W (Tc) Surface Mount PQFN (3x3)

N-Channel 30V 20A (Ta), 40A (Tc) 2.8W (Ta), 37W (Tc) Surface Mount PQFN (3x3)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFHM830DTRPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFHM830DTRPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFHM830DTRPBF
MOSFET N-CH 30V 20A/40A PQFN

MOSFET N-CH 30V 20A/40A PQFN

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 1187630-IRFHM830DTRPBF 278-IRFHM830DTRPBF IRFHM830DTRPBF-ND IRFHM830DTRPBF
Product Name FETs - Single - IRFHM830DTRPBF 30V 20A 40A MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 30 volts
PD 2800 to 37000 milliwatts 2800 milliwatts
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