Infineon Technologies AG 30V 20A 40A MOSFET Transistor IRFHM830DTRPBF

MOSFET N-CH 30V 20A/40A PQFN Product overview: IRFHM830DTRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 20A, 40A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 20A, 40A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFHM830DTRPBF can be used for catalog matching and distributor lookup.

Manufacturer: Infineon Technologies
Win Source Part Number: 1187630-IRFHM830DTRPBF
Packaging: Tape and Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: PQFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: 8-VQFN Exposed Pad
Power Dissipation (Maximum): 2.8W, 37W
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 4,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 30V
Id - Continuous Drain Current: 20A, 40A
Rds On (Maximum) at Id, Vgs: 4.3mOhm at 20A, 10V
Gate Source Voltage(th) (Maximum) at Id: 2.35V at 50μA
Gate Charge (Qg) (Maximum) at Vgs: 27nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 1797pF at 25V

N-Channel 30V 20A (Ta), 40A (Tc) 2.8W (Ta), 37W (Tc) Surface Mount PQFN (3x3)