Infineon Technologies AG P-Channel Power MOSFET IRFH9310

Description
-30V Single P-Channel StrongIRFET™ Power MOSFET in a PQFN 5x6 package The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. Summary of Features Industry standard surface-mount power package Product qualification according to JEDEC standard Silicon optimized for applications switching below <100 kHz Softer body-diode compared to previous silicon generation Wide portfolio available Benefits Standard pinout allows for drop in replacement Industry standard qualification level High performance in low frequency applications Increased power density Provides designers flexibility in selecting the most optimal device for their application Potential Applications Charge and discharge switch for Notebook PC Battery Application Applications 48 V intermediate bus converter (IBC) Benefits Optimized for broadest availability from distribution partners Super logic level : Optimized for 4.5 V gate drive voltage, capable of 2.5 V gate drive voltage Reduced design complexity vs N-channel in high-side configuration Easier interface to microcontroller vs N-channel Industry standard surface-mount power package Designers who used this product also designed with IR3883MTRPBF | Integrated POL Voltage Regulators 2N7002DW | Small signal/small power MOSFET OPTIGA TPM SLB 9672 FW15 OPTIGA™ TPM - Trusted Platform Module IR3883MTRPBF | Integrated POL Voltage Regulators 2N7002DW | Small signal/small power MOSFET OPTIGA TPM SLB 9672 FW15 OPTIGA™ TPM - Trusted Platform Module IR3883MTRPBF | Integrated POL Voltage Regulators 2N7002DW | Small signal/small power MOSFET OPTIGA TPM SLB 9672 FW15 OPTIGA™ TPM - Trusted Platform Module
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Description
-30V Single P-Channel StrongIRFET™ Power MOSFET in a PQFN 5x6 package The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. Summary of Features Industry standard surface-mount power package Product qualification according to JEDEC standard Silicon optimized for applications switching below <100 kHz Softer body-diode compared to previous silicon generation Wide portfolio available Benefits Standard pinout allows for drop in replacement Industry standard qualification level High performance in low frequency applications Increased power density Provides designers flexibility in selecting the most optimal device for their application Potential Applications Charge and discharge switch for Notebook PC Battery Application Applications 48 V intermediate bus converter (IBC) Benefits Optimized for broadest availability from distribution partners Super logic level : Optimized for 4.5 V gate drive voltage, capable of 2.5 V gate drive voltage Reduced design complexity vs N-channel in high-side configuration Easier interface to microcontroller vs N-channel Industry standard surface-mount power package Designers who used this product also designed with IR3883MTRPBF | Integrated POL Voltage Regulators 2N7002DW | Small signal/small power MOSFET OPTIGA TPM SLB 9672 FW15 OPTIGA™ TPM - Trusted Platform Module IR3883MTRPBF | Integrated POL Voltage Regulators 2N7002DW | Small signal/small power MOSFET OPTIGA TPM SLB 9672 FW15 OPTIGA™ TPM - Trusted Platform Module IR3883MTRPBF | Integrated POL Voltage Regulators 2N7002DW | Small signal/small power MOSFET OPTIGA TPM SLB 9672 FW15 OPTIGA™ TPM - Trusted Platform Module
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Datasheet
Datasheet Summary
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The IRFH9310 is a P-channel power MOSFET designed for low-frequency switching applications such as battery management and DC-DC conversion. It is packaged in a PQFN 5mm x 6mm surface-mount case with a drain-to-source voltage rating of -30V and a maximum on-resistance of 4.6mΩ at -10V gate drive. The device supports a continuous drain current of -21A at 25°C and -17A at 70°C, with a pulsed drain current of -170A. It features a gate charge of 110nC, a gate resistance of 2.8Ω, and a junction-to-case thermal resistance of 1.6°C/W. The part is RoHS compliant and meets JEDEC JESD47F and J-STD-020D standards with an MSL2 moisture sensitivity level.

Datasheet Summary
Powered by GS/AI

The IRFH9310 is a P-channel power MOSFET designed for low-frequency switching applications such as battery management and DC-DC conversion. It is packaged in a PQFN 5mm x 6mm surface-mount case with a drain-to-source voltage rating of -30V and a maximum on-resistance of 4.6mΩ at -10V gate drive. The device supports a continuous drain current of -21A at 25°C and -17A at 70°C, with a pulsed drain current of -170A. It features a gate charge of 110nC, a gate resistance of 2.8Ω, and a junction-to-case thermal resistance of 1.6°C/W. The part is RoHS compliant and meets JEDEC JESD47F and J-STD-020D standards with an MSL2 moisture sensitivity level.

Suppliers

Company
Product
Description
Supplier Links
P-Channel Power MOSFET - IRFH9310 - Infineon Technologies AG
Neubiberg, Germany
P-Channel Power MOSFET
IRFH9310
P-Channel Power MOSFET IRFH9310
-30V Single P-Channel StrongIRFET™ Power MOSFET in a PQFN 5x6 package The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. Summary of Features Industry standard surface-mount power package Product qualification according to JEDEC standard Silicon optimized for applications switching below <100 kHz Softer body-diode compared to previous silicon generation Wide portfolio available Benefits Standard pinout allows for drop in replacement Industry standard qualification level High performance in low frequency applications Increased power density Provides designers flexibility in selecting the most optimal device for their application Potential Applications Charge and discharge switch for Notebook PC Battery Application Applications 48 V intermediate bus converter (IBC) Benefits Optimized for broadest availability from distribution partners Super logic level : Optimized for 4.5 V gate drive voltage, capable of 2.5 V gate drive voltage Reduced design complexity vs N-channel in high-side configuration Easier interface to microcontroller vs N-channel Industry standard surface-mount power package Designers who used this product also designed with IR3883MTRPBF | Integrated POL Voltage Regulators 2N7002DW | Small signal/small power MOSFET OPTIGA TPM SLB 9672 FW15 OPTIGA™ TPM - Trusted Platform Module IR3883MTRPBF | Integrated POL Voltage Regulators 2N7002DW | Small signal/small power MOSFET OPTIGA TPM SLB 9672 FW15 OPTIGA™ TPM - Trusted Platform Module IR3883MTRPBF | Integrated POL Voltage Regulators 2N7002DW | Small signal/small power MOSFET OPTIGA TPM SLB 9672 FW15 OPTIGA™ TPM - Trusted Platform Module

-30V Single P-Channel StrongIRFET™ Power MOSFET in a PQFN 5x6 package

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.


Summary of Features

  • Industry standard surface-mount power package
  • Product qualification according to JEDEC standard
  • Silicon optimized for applications switching below <100 kHz
  • Softer body-diode compared to previous silicon generation
  • Wide portfolio available

Benefits

  • Standard pinout allows for drop in replacement
  • Industry standard qualification level
  • High performance in low frequency applications
  • Increased power density
  • Provides designers flexibility in selecting the most optimal device for their application

Potential Applications

Charge and discharge switch for Notebook PC Battery Application


Applications

  • 48 V intermediate bus converter (IBC)

Benefits

  • Optimized for broadest availability from distribution partners
  • Super logic level : Optimized for 4.5 V gate drive voltage, capable of 2.5 V gate drive voltage
  • Reduced design complexity vs N-channel in high-side configuration
  • Easier interface to microcontroller vs N-channel
  • Industry standard surface-mount power package

Designers who used this product also designed with


  • IR3883MTRPBF |
    Integrated POL Voltage Regulators
  • 2N7002DW |
    Small signal/small power MOSFET
  • OPTIGA TPM SLB 9672 FW15
    OPTIGA™ TPM - Trusted Platform Module
  • IR3883MTRPBF |
    Integrated POL Voltage Regulators
  • 2N7002DW |
    Small signal/small power MOSFET
  • OPTIGA TPM SLB 9672 FW15
    OPTIGA™ TPM - Trusted Platform Module
  • IR3883MTRPBF |
    Integrated POL Voltage Regulators
  • 2N7002DW |
    Small signal/small power MOSFET
  • OPTIGA TPM SLB 9672 FW15
    OPTIGA™ TPM - Trusted Platform Module
Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFH9310 - 746301-IRFH9310 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFH9310
746301-IRFH9310
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFH9310 746301-IRFH9310
Manufacturer: INTERNATIONAL RECTIFIER Win Source Part Number: 746301-IRFH9310 Manufacturer Homepage: www.irf.com Reference case: QFN Reference Date Code: 14+Rohs Popularity: Low Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Limited

Manufacturer: INTERNATIONAL RECTIFIER
Win Source Part Number: 746301-IRFH9310
Manufacturer Homepage: www.irf.com
Reference case: QFN
Reference Date Code: 14+Rohs
Popularity: Low
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Limited

Buy Now
Singapore, Singapore
MOSFET Transistor
285-IRFH9310
MOSFET Transistor 285-IRFH9310
Product overview: IRFH9310 from International Rectifier is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IRFH9310 can be used for catalog matching and distributor lookup.

Product overview: IRFH9310 from International Rectifier is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IRFH9310 can be used for catalog matching and distributor lookup.

Supplier's Site

Technical Specifications

  Infineon Technologies AG Win Source Electronics ERSAELECTRONICS PTE. LTD.
Product Category Power MOSFET Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IRFH9310 746301-IRFH9310 285-IRFH9310
Product Name P-Channel Power MOSFET TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFH9310 MOSFET Transistor
Polarity P-Channel; P
Transistor Technology / Material Si/SiC
rDS(on) 0.0046 ohms
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