Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFH8337TRPBF IRFH8337TRPBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 017604-IRFH8337TRPBF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.2W (Ta), 27W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PQFN (5x6) Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 12A (Ta), 35A (Tc) Gate-Source Threshold Voltage: 2.35V @ 25μA Max Gate Charge: 10nC @ 10V Max Input Capacitance: 790pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 12.8 mOhm @ 16.2A, 10V Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 017604-IRFH8337TRPBF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.2W (Ta), 27W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PQFN (5x6) Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 12A (Ta), 35A (Tc) Gate-Source Threshold Voltage: 2.35V @ 25μA Max Gate Charge: 10nC @ 10V Max Input Capacitance: 790pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 12.8 mOhm @ 16.2A, 10V Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFH8337TRPBF - 017604-IRFH8337TRPBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFH8337TRPBF
017604-IRFH8337TRPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFH8337TRPBF 017604-IRFH8337TRPBF
Manufacturer: Infineon Technologies Win Source Part Number: 017604-IRFH8337TRPBF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.2W (Ta), 27W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PQFN (5x6) Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 12A (Ta), 35A (Tc) Gate-Source Threshold Voltage: 2.35V @ 25μA Max Gate Charge: 10nC @ 10V Max Input Capacitance: 790pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 12.8 mOhm @ 16.2A, 10V Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Sufficient

Manufacturer: Infineon Technologies
Win Source Part Number: 017604-IRFH8337TRPBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.2W (Ta), 27W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PQFN (5x6)
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 12A (Ta), 35A (Tc)
Gate-Source Threshold Voltage: 2.35V @ 25μA
Max Gate Charge: 10nC @ 10V
Max Input Capacitance: 790pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 12.8 mOhm @ 16.2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - IRFH8337TRPBFTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFH8337TRPBFTR-ND
Single FETs, MOSFETs IRFH8337TRPBFTR-ND
N-Channel 30V 12A (Ta), 35A (Tc) 3.2W (Ta), 27W (Tc) Surface Mount PQFN (5x6)

N-Channel 30V 12A (Ta), 35A (Tc) 3.2W (Ta), 27W (Tc) Surface Mount PQFN (5x6)

Buy Now Datasheet
Singapore
30V 12A 35A MOSFET Transistor
278-IRFH8337TRPBF
30V 12A 35A MOSFET Transistor 278-IRFH8337TRPBF
MOSFET N-CH 30V 12A/35A PQFN Product overview: IRFH8337TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 12A, 35A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 12A, 35A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFH8337TRPBF can be used for catalog matching and distributor lookup.

MOSFET N-CH 30V 12A/35A PQFN Product overview: IRFH8337TRPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 12A, 35A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 12A, 35A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFH8337TRPBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFH8337TRPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFH8337TRPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFH8337TRPBF
MOSFET N-CH 30V 12A/35A PQFN

MOSFET N-CH 30V 12A/35A PQFN

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 30V 1 N-CH HEXFET 12.8mOhms 4.7nC

MOSFET 30V 1 N-CH HEXFET 12.8mOhms 4.7nC

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 017604-IRFH8337TRPBF IRFH8337TRPBFTR-ND 278-IRFH8337TRPBF IRFH8337TRPBF IRFH8337TRPBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFH8337TRPBF Single FETs, MOSFETs 30V 12A 35A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 30 volts
PD 3200 to 27000 milliwatts 3200 milliwatts
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