Infineon Technologies AG FETs - Single - IRFH8337TR2PBF IRFH8337TR2PBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 714563-IRFH8337TR2PB F Packaging: Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: 8-PowerTDFN Power Dissipation (Maximum): 3.2W, 27W Popularity: Low Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1 MSL Level: 3 (168 Hours) Vds - Drain-Source Breakdown Voltage: 30V Id - Continuous Drain Current: 12A, 35A Rds On (Maximum) at Id, Vgs: 12.8mOhm at 16.2A, 10V Gate Source Voltage(th) (Maximum) at Id: 2.35V at 25μA Gate Charge (Qg) (Maximum) at Vgs: 10nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 790pF at 10V
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 714563-IRFH8337TR2PB F Packaging: Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: 8-PowerTDFN Power Dissipation (Maximum): 3.2W, 27W Popularity: Low Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1 MSL Level: 3 (168 Hours) Vds - Drain-Source Breakdown Voltage: 30V Id - Continuous Drain Current: 12A, 35A Rds On (Maximum) at Id, Vgs: 12.8mOhm at 16.2A, 10V Gate Source Voltage(th) (Maximum) at Id: 2.35V at 25μA Gate Charge (Qg) (Maximum) at Vgs: 10nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 790pF at 10V
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Suppliers

Company
Product
Description
Supplier Links
FETs - Single - IRFH8337TR2PBF - 714563-IRFH8337TR2PBF - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IRFH8337TR2PBF
714563-IRFH8337TR2PBF
FETs - Single - IRFH8337TR2PBF 714563-IRFH8337TR2PBF
Manufacturer: Infineon Technologies Win Source Part Number: 714563-IRFH8337TR2PB F Packaging: Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: 8-PowerTDFN Power Dissipation (Maximum): 3.2W, 27W Popularity: Low Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1 MSL Level: 3 (168 Hours) Vds - Drain-Source Breakdown Voltage: 30V Id - Continuous Drain Current: 12A, 35A Rds On (Maximum) at Id, Vgs: 12.8mOhm at 16.2A, 10V Gate Source Voltage(th) (Maximum) at Id: 2.35V at 25μA Gate Charge (Qg) (Maximum) at Vgs: 10nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 790pF at 10V

Manufacturer: Infineon Technologies
Win Source Part Number: 714563-IRFH8337TR2PBF
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: 8-PowerTDFN
Power Dissipation (Maximum): 3.2W, 27W
Popularity: Low
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1
MSL Level: 3 (168 Hours)
Vds - Drain-Source Breakdown Voltage: 30V
Id - Continuous Drain Current: 12A, 35A
Rds On (Maximum) at Id, Vgs: 12.8mOhm at 16.2A, 10V
Gate Source Voltage(th) (Maximum) at Id: 2.35V at 25μA
Gate Charge (Qg) (Maximum) at Vgs: 10nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 790pF at 10V

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Singapore
30V 9.7A MOSFET Transistor
278-IRFH8337TR2PBF
30V 9.7A MOSFET Transistor 278-IRFH8337TR2PBF
MOSFET N-CH 30V 9.7A 5X6 PQFN Product overview: IRFH8337TR2PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 9.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 9.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFH8337TR2PBF can be used for catalog matching and distributor lookup.

MOSFET N-CH 30V 9.7A 5X6 PQFN Product overview: IRFH8337TR2PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 9.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 9.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFH8337TR2PBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFH8337TR2PBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFH8337TR2PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFH8337TR2PBF
MOSFET N-CH 30V 9.7A 5X6 PQFN

MOSFET N-CH 30V 9.7A 5X6 PQFN

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 714563-IRFH8337TR2PBF 278-IRFH8337TR2PBF IRFH8337TR2PBF
Product Name FETs - Single - IRFH8337TR2PBF 30V 9.7A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel
V(BR)DSS 30 volts
PD 3200 to 27000 milliwatts
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