Infineon Technologies AG N-Channel Power MOSFET IRFH6200

Description
20V Single N-Channel StrongIRFET™ Power MOSFET in a PQFN 5x6 package The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. Summary of Features Industry standard surface-mount power package Product qualification according to JEDEC standard Silicon optimized for applications switching below <100 kHz Softer body-diode compared to previous silicon generation Wide portfolio available Benefits Standard pinout allows for drop in replacement Industry standard qualification level High performance in low frequency applications Increased power density Provides designers flexibility in selecting the most optimal device for their application Potential Applications Battery powered applications DC motor drives System load switch Designers who used this product also designed with CY7C65213-32LTXI | EZ-USB™ Serial Bridge Controller BFR460L3 | Low Noise RF Transistors BBY55-02V | RF tuning diode CY7C65213-32LTXI | EZ-USB™ Serial Bridge Controller BFR460L3 | Low Noise RF Transistors BBY55-02V | RF tuning diode CY7C65213-32LTXI | EZ-USB™ Serial Bridge Controller BFR460L3 | Low Noise RF Transistors BBY55-02V | RF tuning diode
  • N-Channel Power MOSFET - IRFH6200 - Infineon Technologies AG
    Infineon Technologies AG
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Description
20V Single N-Channel StrongIRFET™ Power MOSFET in a PQFN 5x6 package The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. Summary of Features Industry standard surface-mount power package Product qualification according to JEDEC standard Silicon optimized for applications switching below <100 kHz Softer body-diode compared to previous silicon generation Wide portfolio available Benefits Standard pinout allows for drop in replacement Industry standard qualification level High performance in low frequency applications Increased power density Provides designers flexibility in selecting the most optimal device for their application Potential Applications Battery powered applications DC motor drives System load switch Designers who used this product also designed with CY7C65213-32LTXI | EZ-USB™ Serial Bridge Controller BFR460L3 | Low Noise RF Transistors BBY55-02V | RF tuning diode CY7C65213-32LTXI | EZ-USB™ Serial Bridge Controller BFR460L3 | Low Noise RF Transistors BBY55-02V | RF tuning diode CY7C65213-32LTXI | EZ-USB™ Serial Bridge Controller BFR460L3 | Low Noise RF Transistors BBY55-02V | RF tuning diode
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Datasheet
Datasheet Summary
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The IRFH6200 is a 20V N-channel Power MOSFET in a PQFN 5mm x 6mm package with a maximum on-resistance of 0.99 mΩ at VGS = 4.5V and 1.50 mΩ at VGS = 2.5V. It supports a continuous drain current of 49 A at 25°C and 100 A under multi-body configuration, with a pulsed drain current capability of 400 A. The device features a typical gate charge of 155 nC, a gate resistance of 1.3 Ω, and a junction-to-mounting-base thermal resistance of 0.5°C/W. It is rated for operation from -55°C to 150°C and complies with RoHS and is halogen-free. The part meets MSL1 moisture sensitivity level per JEDEC J-STD-020D and is qualified per JEDEC JESD47F.

Datasheet Summary
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The IRFH6200 is a 20V N-channel Power MOSFET in a PQFN 5mm x 6mm package with a maximum on-resistance of 0.99 mΩ at VGS = 4.5V and 1.50 mΩ at VGS = 2.5V. It supports a continuous drain current of 49 A at 25°C and 100 A under multi-body configuration, with a pulsed drain current capability of 400 A. The device features a typical gate charge of 155 nC, a gate resistance of 1.3 Ω, and a junction-to-mounting-base thermal resistance of 0.5°C/W. It is rated for operation from -55°C to 150°C and complies with RoHS and is halogen-free. The part meets MSL1 moisture sensitivity level per JEDEC J-STD-020D and is qualified per JEDEC JESD47F.

Suppliers

Company
Product
Description
Supplier Links
N-Channel Power MOSFET - IRFH6200 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
N-Channel Power MOSFET
IRFH6200
N-Channel Power MOSFET IRFH6200
20V Single N-Channel StrongIRFET™ Power MOSFET in a PQFN 5x6 package The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. Summary of Features Industry standard surface-mount power package Product qualification according to JEDEC standard Silicon optimized for applications switching below <100 kHz Softer body-diode compared to previous silicon generation Wide portfolio available Benefits Standard pinout allows for drop in replacement Industry standard qualification level High performance in low frequency applications Increased power density Provides designers flexibility in selecting the most optimal device for their application Potential Applications Battery powered applications DC motor drives System load switch Designers who used this product also designed with CY7C65213-32LTXI | EZ-USB™ Serial Bridge Controller BFR460L3 | Low Noise RF Transistors BBY55-02V | RF tuning diode CY7C65213-32LTXI | EZ-USB™ Serial Bridge Controller BFR460L3 | Low Noise RF Transistors BBY55-02V | RF tuning diode CY7C65213-32LTXI | EZ-USB™ Serial Bridge Controller BFR460L3 | Low Noise RF Transistors BBY55-02V | RF tuning diode

20V Single N-Channel StrongIRFET™ Power MOSFET in a PQFN 5x6 package

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.


Summary of Features

  • Industry standard surface-mount power package
  • Product qualification according to JEDEC standard
  • Silicon optimized for applications switching below <100 kHz
  • Softer body-diode compared to previous silicon generation
  • Wide portfolio available

Benefits

  • Standard pinout allows for drop in replacement
  • Industry standard qualification level
  • High performance in low frequency applications
  • Increased power density
  • Provides designers flexibility in selecting the most optimal device for their application

Potential Applications

  • Battery powered applications
  • DC motor drives
  • System load switch

Designers who used this product also designed with


  • CY7C65213-32LTXI |
    EZ-USB™ Serial Bridge Controller
  • BFR460L3 |
    Low Noise RF Transistors
  • BBY55-02V |
    RF tuning diode
  • CY7C65213-32LTXI |
    EZ-USB™ Serial Bridge Controller
  • BFR460L3 |
    Low Noise RF Transistors
  • BBY55-02V |
    RF tuning diode
  • CY7C65213-32LTXI |
    EZ-USB™ Serial Bridge Controller
  • BFR460L3 |
    Low Noise RF Transistors
  • BBY55-02V |
    RF tuning diode
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IRFH6200
Product Name N-Channel Power MOSFET
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 9.50E-4 ohms
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