Infineon Technologies AG FETs - Single - IRFH5110TR2PBF IRFH5110TR2PBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 1187609-IRFH5110TR2P BF Packaging: Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: 8-PowerVDFN Power Dissipation (Maximum): 3.6W, 114W Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 100V Id - Continuous Drain Current: 11A, 63A Rds On (Maximum) at Id, Vgs: 12.4mOhm at 37A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 100μA Gate Charge (Qg) (Maximum) at Vgs: 72nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 3152pF at 25V
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 1187609-IRFH5110TR2P BF Packaging: Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: 8-PowerVDFN Power Dissipation (Maximum): 3.6W, 114W Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 100V Id - Continuous Drain Current: 11A, 63A Rds On (Maximum) at Id, Vgs: 12.4mOhm at 37A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 100μA Gate Charge (Qg) (Maximum) at Vgs: 72nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 3152pF at 25V
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Suppliers

Company
Product
Description
Supplier Links
FETs - Single - IRFH5110TR2PBF - 1187609-IRFH5110TR2PBF - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IRFH5110TR2PBF
1187609-IRFH5110TR2PBF
FETs - Single - IRFH5110TR2PBF 1187609-IRFH5110TR2PBF
Manufacturer: Infineon Technologies Win Source Part Number: 1187609-IRFH5110TR2P BF Packaging: Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: 8-PowerVDFN Power Dissipation (Maximum): 3.6W, 114W Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 100V Id - Continuous Drain Current: 11A, 63A Rds On (Maximum) at Id, Vgs: 12.4mOhm at 37A, 10V Gate Source Voltage(th) (Maximum) at Id: 4V at 100μA Gate Charge (Qg) (Maximum) at Vgs: 72nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 3152pF at 25V

Manufacturer: Infineon Technologies
Win Source Part Number: 1187609-IRFH5110TR2PBF
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: 8-PowerVDFN
Power Dissipation (Maximum): 3.6W, 114W
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 100V
Id - Continuous Drain Current: 11A, 63A
Rds On (Maximum) at Id, Vgs: 12.4mOhm at 37A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 100μA
Gate Charge (Qg) (Maximum) at Vgs: 72nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 3152pF at 25V

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Singapore
100V MOSFET Transistor
278-IRFH5110TR2PBF
100V MOSFET Transistor 278-IRFH5110TR2PBF
MOSFET N-CH 100V 5X6 PQFN Product overview: IRFH5110TR2PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFH5110TR2PBF can be used for catalog matching and distributor lookup.

MOSFET N-CH 100V 5X6 PQFN Product overview: IRFH5110TR2PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFH5110TR2PBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFH5110TR2PBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFH5110TR2PBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFH5110TR2PBF
MOSFET N-CH 100V 5X6 PQFN

MOSFET N-CH 100V 5X6 PQFN

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1187609-IRFH5110TR2PBF 278-IRFH5110TR2PBF IRFH5110TR2PBF
Product Name FETs - Single - IRFH5110TR2PBF 100V MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel
V(BR)DSS 100 volts
QG 72 nC
PD 3600 to 114000 milliwatts
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