Infineon Technologies AG Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IRFH4253D IRFH4253D

The IRFH4253DPbF is a dual N-channel HEXFET power MOSFET in a Dual PQFN 5mm x 6mm package, designed for synchronous buck converter applications with a control and synchronous MOSFET integrated in one package. The control MOSFET has a typical gate charge of 10 nC and the synchronous MOSFET has a maximum on-resistance of 1.45 mΩ at 4.5 V gate drive. The device supports a continuous drain current of 35 A for both channels at 25 °C with source bonding technology limiting current, and an avalanche energy rating of 61 mJ for Q1 and 568 mJ for Q2. It features an intrinsic Schottky diode with a forward voltage of 0.75 V on Q2. The device is RoHS compliant, halogen-free, qualified for industrial use, and meets MSL1 moisture sensitivity level.