Infineon Technologies AG High Reliability - Defense - Power - HiRel MOSFETs - Single channel high reliability power MOSFETs - IRFF9230 IRFF9230

Description
-200V Single P-Channel Hi-Rel MOSFET in a TO-205AF package - A IRFF9230 with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts 2N6851 A 2N6851 with Hermetic Packaging IRFF9230 A IRFF9230 with Hermetic Packaging JANS2N6851 A JANS2N6851 with Hermetic Packaging JANTX2N6851 A JANTX2N6851 with Hermetic Packaging JANTXV2N6851 A JANTXV2N6851 with Hermetic Packaging
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Description
-200V Single P-Channel Hi-Rel MOSFET in a TO-205AF package - A IRFF9230 with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts 2N6851 A 2N6851 with Hermetic Packaging IRFF9230 A IRFF9230 with Hermetic Packaging JANS2N6851 A JANS2N6851 with Hermetic Packaging JANTX2N6851 A JANTX2N6851 with Hermetic Packaging JANTXV2N6851 A JANTXV2N6851 with Hermetic Packaging
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Datasheet
Datasheet Summary
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The IRFF9230 is a P-channel HEXFET® power MOSFET rated for 200V drain-to-source voltage and -4.0A continuous drain current, designed for high-reliability applications such as switching power supplies and motor controls. It is packaged in a hermetically sealed TO-205AF (TO-39) case, weighing 0.98 g, with a maximum power dissipation of 25 W and a junction-to-case thermal resistance of 5.0 °C/W. The device features repetitive avalanche capability with 2.5 mJ per pulse and a peak diode recovery dv/dt of -5.0 V/ns. It meets MIL-PRF-19500/564 and has an ESD rating of Class 1C per MIL-STD-750, Method 1020. Operating junction temperature ranges from -55°C to +150°C.

Datasheet Summary
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The IRFF9230 is a P-channel HEXFET® power MOSFET rated for 200V drain-to-source voltage and -4.0A continuous drain current, designed for high-reliability applications such as switching power supplies and motor controls. It is packaged in a hermetically sealed TO-205AF (TO-39) case, weighing 0.98 g, with a maximum power dissipation of 25 W and a junction-to-case thermal resistance of 5.0 °C/W. The device features repetitive avalanche capability with 2.5 mJ per pulse and a peak diode recovery dv/dt of -5.0 V/ns. It meets MIL-PRF-19500/564 and has an ESD rating of Class 1C per MIL-STD-750, Method 1020. Operating junction temperature ranges from -55°C to +150°C.

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High Reliability - Defense - Power - HiRel MOSFETs - Single channel high reliability power MOSFETs - IRFF9230 - IRFF9230 - Infineon Technologies AG
Neubiberg, Germany
High Reliability - Defense - Power - HiRel MOSFETs - Single channel high reliability power MOSFETs - IRFF9230
IRFF9230
High Reliability - Defense - Power - HiRel MOSFETs - Single channel high reliability power MOSFETs - IRFF9230 IRFF9230
-200V Single P-Channel Hi-Rel MOSFET in a TO-205AF package - A IRFF9230 with Hermetic Packaging Benefits Hermetically packaged power MOSFET Packaged on a MIL-PRF-19500 manufacturing line Similar Parts 2N6851 A 2N6851 with Hermetic Packaging IRFF9230 A IRFF9230 with Hermetic Packaging JANS2N6851 A JANS2N6851 with Hermetic Packaging JANTX2N6851 A JANTX2N6851 with Hermetic Packaging JANTXV2N6851 A JANTXV2N6851 with Hermetic Packaging

-200V Single P-Channel Hi-Rel MOSFET in a TO-205AF package - A IRFF9230 with Hermetic Packaging

Benefits

  • Hermetically packaged power MOSFET
  • Packaged on a MIL-PRF-19500 manufacturing line

Similar Parts

2N6851

A 2N6851 with Hermetic Packaging

IRFF9230

A IRFF9230 with Hermetic Packaging

JANS2N6851

A JANS2N6851 with Hermetic Packaging


JANTX2N6851 A JANTX2N6851 with Hermetic Packaging
JANTXV2N6851 A JANTXV2N6851 with Hermetic Packaging

Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IRFF9230
Product Name High Reliability - Defense - Power - HiRel MOSFETs - Single channel high reliability power MOSFETs - IRFF9230
Polarity P-Channel; P
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