Infineon Technologies AG High Reliability - Defense - Power - HiRel MOSFETs - Single channel high reliability power MOSFETs - IRFF9120 IRFF9120

The IRFF9120 is a P-channel HEXFET® power MOSFET designed for high-reliability applications such as switching power supplies and pulse circuits, housed in a hermetically sealed TO-205AF (TO-39) package weighing 0.98 g. It is rated for a drain-to-source voltage of -100V, continuous drain current of -4.0A at 25°C, and maximum power dissipation of 20W. The device supports repetitive avalanche energy of 2.0 mJ and a peak diode recovery dv/dt of -5.0 V/ns. It meets MIL-PRF-19500/563 requirements and is classified as ESD Class 1B per MIL-STD-750 Method 1020. Junction-to-case thermal resistance is 6.25 °C/W, and operating junction temperature ranges from -55°C to +150°C.