Trans MOSFET N-CH 500V 2.5A 3-Pin TO-39 Product overview: IRFF430 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 2.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 2.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFF430 can be used for catalog matching and distributor lookup.
Manufacturer: Infineon Technologies
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 992473-IRFF430
Mounting: SMD (SMT)
Drain to Source Voltage (Vdss): 500 V
Number of Elements: 1
Power Dissipation: 25 W
Number of Pins: 3
Categories: Transistors - FETs, MOSFETs - RF
Case / Package: TO-39
Alternative Parts (Cross-Reference): IRFF420; 2N6849; IRFF9230; 2N6798; IRFF9130.; IRFF130;
Popularity: Low
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 150 °C
Lead Free: Contains Lead
Mount: Through Hole
RoHS: Non-Compliant
Radiation Hardening: No
Min Operating Temperature: -55 °C
Schedule B: 8541290080, 8541290080
REACH SVHC: No SVHC
Max Power Dissipation: 25 W
Continuous Drain Current (ID): 2.5 A
Drain to Source Breakdown Voltage: 500 V
Drain to Source Resistance: 1.5 Ω
Gate to Source Voltage (Vgs): 20 V
Nominal Vgs: 4 V
On-State Resistance: 10.5 Ω
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET |
| Product Number | 278-IRFF430 | 992473-IRFF430 |
| Product Name | 500V 2.5A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFF430 |
| MOSFET Operating Mode | Enhancement | |
| V(BR)DSS | 500 volts | 500 volts |
| PD | 25000 milliwatts | 25000 milliwatts |