Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFF310 IRFF310

Description
Manufacturer: Infineon Technologies Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1000331-IRFF310 Mounting: SMD (SMT) Drain to Source Voltage (Vdss): 400 V Number of Elements: 1 Power Dissipation: 15 W Number of Pins: 3 Categories: Transistors - FETs, MOSFETs - RF Case / Package: TO-39 Alternative Parts (Cross-Reference): 2N6786; JANTX2N6786; IRFF420; 2N6794; IRFF110; 2N6782; Popularity: Low Fake Threat In the Open Market: 73 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Lead Free: Contains Lead Mount: Through Hole RoHS: Non-Compliant Radiation Hardening: No Min Operating Temperature: -55 °C Continuous Drain Current (ID): 1.25 A Drain to Source Breakdown Voltage: 400 V Drain to Source Resistance: 3.6 Ω Gate to Source Voltage (Vgs): 20 V On-State Resistance: 30.6 Ω
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Description
Manufacturer: Infineon Technologies Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1000331-IRFF310 Mounting: SMD (SMT) Drain to Source Voltage (Vdss): 400 V Number of Elements: 1 Power Dissipation: 15 W Number of Pins: 3 Categories: Transistors - FETs, MOSFETs - RF Case / Package: TO-39 Alternative Parts (Cross-Reference): 2N6786; JANTX2N6786; IRFF420; 2N6794; IRFF110; 2N6782; Popularity: Low Fake Threat In the Open Market: 73 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Lead Free: Contains Lead Mount: Through Hole RoHS: Non-Compliant Radiation Hardening: No Min Operating Temperature: -55 °C Continuous Drain Current (ID): 1.25 A Drain to Source Breakdown Voltage: 400 V Drain to Source Resistance: 3.6 Ω Gate to Source Voltage (Vgs): 20 V On-State Resistance: 30.6 Ω
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFF310 - 1000331-IRFF310 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFF310
1000331-IRFF310
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFF310 1000331-IRFF310
Manufacturer: Infineon Technologies Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1000331-IRFF310 Mounting: SMD (SMT) Drain to Source Voltage (Vdss): 400 V Number of Elements: 1 Power Dissipation: 15 W Number of Pins: 3 Categories: Transistors - FETs, MOSFETs - RF Case / Package: TO-39 Alternative Parts (Cross-Reference): 2N6786; JANTX2N6786; IRFF420; 2N6794; IRFF110; 2N6782; Popularity: Low Fake Threat In the Open Market: 73 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Lead Free: Contains Lead Mount: Through Hole RoHS: Non-Compliant Radiation Hardening: No Min Operating Temperature: -55 °C Continuous Drain Current (ID): 1.25 A Drain to Source Breakdown Voltage: 400 V Drain to Source Resistance: 3.6 Ω Gate to Source Voltage (Vgs): 20 V On-State Resistance: 30.6 Ω

Manufacturer: Infineon Technologies
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1000331-IRFF310
Mounting: SMD (SMT)
Drain to Source Voltage (Vdss): 400 V
Number of Elements: 1
Power Dissipation: 15 W
Number of Pins: 3
Categories: Transistors - FETs, MOSFETs - RF
Case / Package: TO-39
Alternative Parts (Cross-Reference): 2N6786; JANTX2N6786; IRFF420; 2N6794; IRFF110; 2N6782;
Popularity: Low
Fake Threat In the Open Market: 73 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 150 °C
Lead Free: Contains Lead
Mount: Through Hole
RoHS: Non-Compliant
Radiation Hardening: No
Min Operating Temperature: -55 °C
Continuous Drain Current (ID): 1.25 A
Drain to Source Breakdown Voltage: 400 V
Drain to Source Resistance: 3.6 Ω
Gate to Source Voltage (Vgs): 20 V
On-State Resistance: 30.6 Ω

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Technical Specifications

  Win Source Electronics
Product Category Power MOSFET
Product Number 1000331-IRFF310
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFF310
V(BR)DSS 400 volts
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