Infineon Technologies AG High Reliability - Defense - Power - HiRel MOSFETs - Single channel high reliability power MOSFETs - IRFF210 IRFF210

The IRFF210 is a 200V N-channel HEXFET® power MOSFET designed for high-reliability applications such as switching power supplies and pulse circuits, housed in a hermetically sealed TO-205AF (TO-39) package weighing 0.98 g. It features a continuous drain current of 2.25 A at 25°C, a maximum on-resistance of 1.6 Ω at Vgs = 10 V and Id = 2.25 A, and a repetitive avalanche energy rating of 1.5 mJ. The device supports a peak diode recovery dv/dt of 5.0 V/ns and meets MIL-PRF-19500/556. It is rated for junction temperatures from -55°C to +150°C, with a maximum power dissipation of 15 W and a junction-to-case thermal resistance of 8.33 °C/W. ESD protection complies with MIL-STD-750, Method 1020, Class 1A.