Infineon Technologies AG High Reliability - Defense - Power - HiRel MOSFETs - Single channel high reliability power MOSFETs - IRFE430 IRFE430

IRFE430 is a 500V N-channel HEXFET MOSFET designed for high-reliability applications, housed in a hermetically sealed leadless chip carrier (LCC-18) package with a typical weight of 0.42 g. It has a continuous drain current rating of 2.5 A at 25°C case temperature and a maximum power dissipation of 25 W. The device is rated for repetitive avalanche energy of 2.5 mJ and peak diode recovery dv/dt of 6.2 V/ns. Junction temperature operates from -55°C to 150°C. The package is grounded to the source to reduce RF interference and is designed as a surface-mount replacement for the TO-39 package. It meets MIL-PRF-19500/557 and has an ESD rating of Class 1C per MIL-STD-750, Method 1020.