Infineon Technologies AG Single FETs, MOSFETs IRFBA90N20DPBF

N-Channel 200V 98A (Tc) 650W (Tc) Through Hole SUPER-220™ (TO-273AA)

MOSFET N-CH 200V 98A SUPER-220 Product overview: IRFBA90N20DPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 98A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 98A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFBA90N20DPBF can be used for catalog matching and distributor lookup.

Manufacturer: Infineon Technologies
Win Source Part Number: 1187521-IRFBA90N20DPBF
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: SUPER-220 (TO-273AA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: Super-220-3 (Straight Leads)
Power Dissipation (Maximum): 650W
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 200V
Id - Continuous Drain Current: 98A
Rds On (Maximum) at Id, Vgs: 23mOhm at 59A, 10V
Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 240nC at 10V
Gate Source Voltage (Maximum): ±30V
Input Capacitance (Ciss) (Maximum) at Vds: 6080pF at 25V

IRFBA90N20 - SMPS HEXFET

MOSFET N-CH 200V 98A SUPER-220