MOSFET N-CH 60V 195A TO220AB Product overview: IRFB7530PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 195A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 195A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFB7530PBF can be used for catalog matching and distributor lookup.
N-Channel 60V 195A (Tc) 375W (Tc) Through Hole TO-220AB
Manufacturer: Infineon Technologies
Win Source Part Number: 875090-IRFB7530PBF
Series: HEXFET®, StrongIRFET™
Operating Temperature Range: -55°C ~ 175°C (TJ)
Features: N-Channel 60 V 195A (Tc) 375W (Tc) Through Hole TO-220AB
Package: TO-220-3
Package: Tube
Mounting: Through Hole
Family Name: IRFB7530
Categories: Discrete Semiconductor Products
Case / Package: TO-220AB
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Limited
Quantity per package: 50
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 46 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
MOSFET 60V 195A StrongIRFET TO220AB
MOSFET 60V 195A StrongIRFET TO220AB
MOSFET 60V 195A StrongIRFET TO220AB
MOSFET N-CH 60V 195A TO220AB
MOSFET MOSFET N CH 60V 195A TO-220AB
MOSFET N-CH 60V 195A TO220AB
Single N-Channel 60 V 2 mOhm 274 nC HEXFET® Power Mosfet - TO-220-3
MOSFET, N CHANNEL, 60V, 195A, TO-220AB-3; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:195A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.7V RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IRFB7530PBF | 448-IRFB7530PBF-ND | 875090-IRFB7530PBF | 8208833P | 8208833 | IRFB7530PBF | IRFB7530PBF | IRFB7530PBF | 376-IRFB7530PBF | 43X7200 |
| Product Name | 60V 195A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB7530PBF | MOSFETs | MOSFETs | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single N-Channel 60 V 2 mOhm 274 nC HEXFET® Power Mosfet - TO-220-3 | Mosfet, N Channel, 60V, 195A, To-220Ab-3; Channel Type Infineon |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| MOSFET Operating Mode | Enhancement | Enhancement | ||||||||
| V(BR)DSS | 60 volts | 60 volts | 60 volts | |||||||
| Transconductance | 0.2420 kS | |||||||||
| PD | 375 milliwatts | 375000 milliwatts | 375000 milliwatts |
