MOSFET N-CH 100V 75A TO220AB Product overview: IRFB4710PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 75A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 75A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFB4710PBF can be used for catalog matching and distributor lookup.
N-Channel 100V 75A (Tc) 3.8W (Ta), 200W (Tc) Through Hole TO-220AB
Manufacturer: Infineon Technologies
Win Source Part Number: 069461-IRFB4710PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Family Name: IRFB4710
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 75A (Tc)
Gate-Source Threshold Voltage: 5.5V @ 250μA
Max Gate Charge: 170nC @ 10V
Max Input Capacitance: 6160pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 14 mOhm @ 45A, 10V
Alternative Parts (Cross-Reference): HUF75645P3_NL; HUF75645P3_Q; IXTP80N10T;
Introduction Date: April 30, 2004
ECCN: EAR99
Country of Origin: China, Mexico
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Balance
MOSFET MOSFT 100V 75A 14mOhm 110nC
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.011Ohm;ID 75A;TO-220AB;PD 200W;VGS +/-20V
MOSFET N-CH 100V 75A TO220AB
MOSFET N-CH 100V 75A TO220AB
DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 75A I(D), 100V, 0.014OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Allied Electronics, Inc. | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Radwell International | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors |
| Product Number | 278-IRFB4710PBF | IRFB4710PBF-ND | 069461-IRFB4710PBF | IRFB4710PBF | 70017021 | IRFB4710PBF | IRFB4710PBF | 66789827 |
| Product Name | 100V 75A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB4710PBF | MOSFET | MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.011Ohm;ID 75A;TO-220AB;PD 200W;VGS +/-20V | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Transistor |
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 100 volts | 100 volts | 100 volts | 100 volts | ||||
| PD | 3800 milliwatts | 3800 to 200000 milliwatts | 200000 milliwatts | 3800 milliwatts | ||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||||
| Package Type | Tube | TO-220; TO-220-3 | TO-220; SOT3; TO-220AB | TO-220 | TO-220; TO-220-3 | TO-220; TO-220-3 |
