MOSFET N-CH 100V 62A TO220AB
N-Channel 100V 62A (Tc) 140W (Tc) Through Hole TO-220AB
Manufacturer: Infineon Technologies
Win Source Part Number: 1187507-IRFB4510PBF
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: TO-220-3
Power Dissipation (Maximum): 140W
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 100V
Id - Continuous Drain Current: 62A
Rds On (Maximum) at Id, Vgs: 13.5mOhm at 37A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4V at 100μA
Gate Charge (Qg) (Maximum) at Vgs: 87nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 3180pF at 50V
MOSFET N-CH 100V 62A TO220AB
MOSFET, N-CH, 100V, 62A, 175DEG C, 140W; Transistor Polarity:N Channel; Continuous Drain Current Id:62A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0107ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes
| ODG (Origin Data Global) | DigiKey | RS Components, Ltd. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRFB4510PBF | IRFB4510PBF-ND | 2579351P | 1187507-IRFB4510PBF | IRFB4510PBF | 39AH8934 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFETs | FETs - Single - IRFB4510PBF | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 100V, 62A, 175Deg C, 140W; Transistor Polarity Infineon |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 100 volts | 100 volts | ||||
| IDSS | 62000 milliamps | 62000 milliamps | ||||
| PD | 140000 milliwatts | 140000 milliwatts |
