Manufacturer: Infineon Technologies
Win Source Part Number: 083592-IRFB4332PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 390W (Tc)
Family Name: IRFB4332
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -40°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 250V
Continuous Drain Current at 25°C: 60A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 150nC @ 10V
Max Input Capacitance: 5860pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 33 mOhm @ 35A, 10V
Alternative Parts (Cross-Reference): IXTV96N25T; FDP2710_F085; FDP2710;
Introduction Date: June 05, 2006
ECCN: EAR99
Country of Origin: Mexico
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Balance
IRFB4332 - 12V-300V N-CHANNEL PO
MOSFET N-CH 250V 60A TO220AB
N-Channel 250V 60A (Tc) 390W (Tc) Through Hole TO-220AB
MOSFET N-Channel 250V 60A HEXFET TO220AB
MOSFET N-Channel 250V 60A HEXFET TO220AB
MOSFET N-CH 250V 60A TO220AB Product overview: IRFB4332PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 250V, 60A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 250V, 60A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFB4332PBF can be used for catalog matching and distributor lookup.
MOSFET, N, 250V, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:250V; On Resistance Rds(on):0.033ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation RoHS Compliant: Yes
POWER FIELD-EFFECT TRANSISTOR, 60A I(D), 250V, 0.033OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB. FREE 2 YEAR RADWELL WARRANTY
MOSFET MOSFT 250V 60A 33mOhm 99nC Qg
MOSFET N-CH 250V 60A TO220AB
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | Radwell International | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 083592-IRFB4332PBF | IRFB4332PBF | IRFB4332PBF-ND | 495562 | 278-IRFB4332PBF | 61M6837 | 66771466 | IRFB4332PBF | IRFB4332PBF |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB4332PBF | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFETs | 250V 60A MOSFET Transistor | Mosfet, N, 250V, To-220Ab; Transistor Polarity Infineon | Transistor | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | ||||
| V(BR)DSS | 250 volts | 250 volts | 250 volts | ||||||
| PD | 390000 milliwatts | 390000 milliwatts | 390 milliwatts | ||||||
| TJ | -40 to 175 C (-40 to 347 F) | -40 to 175 C (-40 to 347 F) | -40 to 175 C (-40 to 347 F) | ||||||
| Package Type | TO-220; SOT3; TO-220AB | TO-220; TO-220-3 | TO-220; TO-220-3 | TO-220; To-220ab | Tube | TO-3; TO-220 | TO-220; TO-220-3 |
