MOSFET N-Channel 200V 65A TO220AB
Manufacturer: Infineon Technologies
Win Source Part Number: 090679-IRFB4227PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 330W (Tc)
Family Name: IRFB4227
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -40°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 65A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 98nC @ 10V
Max Input Capacitance: 4600pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 24 mOhm @ 46A, 10V
Alternative Parts (Cross-Reference): STP80N20M5; IXTP86N20T; FDP2614; SUP90140E-GE3;
Introduction Date: October 12, 2005
ECCN: EAR99
Country of Origin: China, Philippines
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Sufficient
N-Channel 200V 65A (Tc) 330W (Tc) Through Hole TO-220AB
MOSFET N-CH 200V 65A TO220AB Product overview: IRFB4227PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 65A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 65A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFB4227PBF can be used for catalog matching and distributor lookup.
200V 65A 330W 24mΩ@10V,46A 5V@250uA N Channel TO-220AB MOSFETs ROHS
MOSFET N-CH 200V 65A TO220AB
MOSFET N-CH 200V 65A TO220AB
This HEXFET Power MOSFET is specially designed for Sustain; nergy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low Epulse rating. Additional features of this MOSFET are 175C operating junction temperature and high repetitive current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
"Features:
Advanced Process Technology
Key Parameters Optimized for PDP Sustain, Energy Recovery and pass Switch Applications
Low E pulse rating to reduce power dissipation in PDP applications
Low Qg for fast Response
High Repetitive Peak current capability for reliable operation
Short fall & rise times for fast switching
175 degC operating junction temperature for improved ruggedness
Repetitive Avalanche capability for robustness and reliability"
MOSFET MOSFT 200V 65A 26mOhm 70nC Qg
MOSFET, 200V, 65A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:65A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; No. of Pins:3Pins RoHS Compliant: Yes
| RS Components, Ltd. | RS Components, Ltd. | Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | LCSC Electronics Technology (HK) Limited | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Allied Electronics, Inc. | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 6504277 | 6504277P | 090679-IRFB4227PBF | 448-IRFB4227PBF-ND | 278-IRFB4227PBF | IRFB4227PBF | IRFB4227PBF | IRFB4227PBF | 70017362 | IRFB4227PBF | 66K6432 |
| Product Name | MOSFETs | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB4227PBF | Single FETs, MOSFETs | 200V 65A MOSFET Transistor | Triode/MOS Tube/Transistor >> MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 19.7 Milliohms;ID 65A;TO-220AB;PD 330W | MOSFET | Mosfet, 200V, 65A, To-220Ab; Channel Type Infineon |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| MOSFET Operating Mode | Enhancement | Enhancement | |||||||||
| Package Type | TO-220; To-220ab | TO-220; TO-220 | TO-220; SOT3; TO-220AB | TO-220; TO-220-3 | Tube | TO-220 | TO-220; TO-220-3 | TO-220; TO-220-3 | TO-220 | TO-3; TO-220 | |
| Number of units in IC | 1 | ||||||||||
| V(BR)DSS | 200 volts | 200 volts | 200 volts | 200 volts | 200 volts |
