MOSFET N-CH 200V 65A TO220AB Product overview: IRFB4227PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 65A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 65A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFB4227PBF can be used for catalog matching and distributor lookup.
N-Channel 200V 65A (Tc) 330W (Tc) Through Hole TO-220AB
MOSFET N-Channel 200V 65A TO220AB
Manufacturer: Infineon Technologies
Win Source Part Number: 090679-IRFB4227PBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 330W (Tc)
Family Name: IRFB4227
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -40°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 65A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 98nC @ 10V
Max Input Capacitance: 4600pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 24 mOhm @ 46A, 10V
Alternative Parts (Cross-Reference): STP80N20M5; IXTP86N20T; FDP2614; SUP90140E-GE3;
Introduction Date: October 12, 2005
ECCN: EAR99
Country of Origin: China, Philippines
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Sufficient
This HEXFET Power MOSFET is specially designed for Sustain; nergy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low Epulse rating. Additional features of this MOSFET are 175C operating junction temperature and high repetitive current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
"Features:
Advanced Process Technology
Key Parameters Optimized for PDP Sustain, Energy Recovery and pass Switch Applications
Low E pulse rating to reduce power dissipation in PDP applications
Low Qg for fast Response
High Repetitive Peak current capability for reliable operation
Short fall & rise times for fast switching
175 degC operating junction temperature for improved ruggedness
Repetitive Avalanche capability for robustness and reliability"
MOSFET N-CH 200V 65A TO220AB
MOSFET N-CH 200V 65A TO220AB
MOSFET, 200V, 65A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:65A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; No. of Pins:3Pins RoHS Compliant: Yes
MOSFET MOSFT 200V 65A 26mOhm 70nC Qg
200V 65A 330W 24mΩ@10V,46A 5V@250uA N Channel TO-220AB MOSFETs ROHS
| ERSAELECTRONICS PTE. LTD. | DigiKey | RS Components, Ltd. | RS Components, Ltd. | Win Source Electronics | Allied Electronics, Inc. | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IRFB4227PBF | 448-IRFB4227PBF-ND | 6504277 | 6504277P | 090679-IRFB4227PBF | 70017362 | IRFB4227PBF | IRFB4227PBF | 66K6432 | IRFB4227PBF | IRFB4227PBF |
| Product Name | 200V 65A MOSFET Transistor | Single FETs, MOSFETs | MOSFETs | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB4227PBF | MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 19.7 Milliohms;ID 65A;TO-220AB;PD 330W | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, 200V, 65A, To-220Ab; Channel Type Infineon | MOSFET | Triode/MOS Tube/Transistor >> MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| MOSFET Operating Mode | Enhancement | Enhancement | |||||||||
| V(BR)DSS | 200 volts | 200 volts | 200 volts | 200 volts | 200 volts | ||||||
| Transconductance | 0.0490 kS | 0.0490 kS | |||||||||
| PD | 330 milliwatts | 330000 milliwatts | 330000 milliwatts | 330000 milliwatts | 330000 milliwatts |
