Infineon Technologies AG N-Channel Power MOSFET IRFB4115

Description
150V Single N-Channel StrongIRFET™ Power MOSFET in a TO-220 package The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. Summary of Features Industry standard through-hole power package High-current rating Product qualification according to JEDEC standard Silicon optimized for applications switching below <100 kHz Softer body-diode compared to previous silicon generation Wide portfolio available Benefits Standard pinout allows for drop in replacement High-current carrying capability package Industry standard qualification level High performance in low frequency applications Increased power density Provides designers flexibility in selecting the most optimal device for their application Potential Applications LEV Forklift Power and gardening tool Applications EV charging Fuel-cell control unit (FCCU) Industrial automation Offline UPS - high frequency transformers Uninterruptible power supplies (UPS) Designers who used this product also designed with IRF1405 | N-Channel Power MOSFET IRFB7437 | N-Channel Power MOSFET IRS2093MPBF | Discrete Class D Audio Amplifier ICs IRFR5410 | P-Channel Power MOSFET IRF7324 | P-Channel Power MOSFET IRF1404Z | N-Channel Power MOSFET IRF1405 | N-Channel Power MOSFET IRFB7437 | N-Channel Power MOSFET IRS2093MPBF | Discrete Class D Audio Amplifier ICs IRFR5410 | P-Channel Power MOSFET IRF7324 | P-Channel Power MOSFET IRF1404Z | N-Channel Power MOSFET IRF1405 | N-Channel Power MOSFET IRFB7437 | N-Channel Power MOSFET 1 2
  • N-Channel Power MOSFET - IRFB4115 - Infineon Technologies AG
    Infineon Technologies AG
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Description
150V Single N-Channel StrongIRFET™ Power MOSFET in a TO-220 package The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. Summary of Features Industry standard through-hole power package High-current rating Product qualification according to JEDEC standard Silicon optimized for applications switching below <100 kHz Softer body-diode compared to previous silicon generation Wide portfolio available Benefits Standard pinout allows for drop in replacement High-current carrying capability package Industry standard qualification level High performance in low frequency applications Increased power density Provides designers flexibility in selecting the most optimal device for their application Potential Applications LEV Forklift Power and gardening tool Applications EV charging Fuel-cell control unit (FCCU) Industrial automation Offline UPS - high frequency transformers Uninterruptible power supplies (UPS) Designers who used this product also designed with IRF1405 | N-Channel Power MOSFET IRFB7437 | N-Channel Power MOSFET IRS2093MPBF | Discrete Class D Audio Amplifier ICs IRFR5410 | P-Channel Power MOSFET IRF7324 | P-Channel Power MOSFET IRF1404Z | N-Channel Power MOSFET IRF1405 | N-Channel Power MOSFET IRFB7437 | N-Channel Power MOSFET IRS2093MPBF | Discrete Class D Audio Amplifier ICs IRFR5410 | P-Channel Power MOSFET IRF7324 | P-Channel Power MOSFET IRF1404Z | N-Channel Power MOSFET IRF1405 | N-Channel Power MOSFET IRFB7437 | N-Channel Power MOSFET 1 2
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Datasheet
Datasheet Summary
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IRFB4115PbF is a 150V N-channel MOSFET in a TO-220 package, designed for high-efficiency synchronous rectification, uninterruptible power supplies, and high-speed switching applications. It has a continuous drain current of 104A at 25°C and 74A at 100°C, a typical on-resistance of 9.3mΩ at 10V gate drive, and a pulsed drain current rating of 420A. The device features a maximum power dissipation of 380W, a gate-to-source voltage rating of ±20V, and an avalanche energy of 830mJ. Its body diode exhibits a forward voltage of 1.3V at 62A and reverse recovery times of 86ns at 25°C and 110ns at 125°C. The MOSFET is RoHS compliant, halogen-free, and lead-free, with a junction temperature range of -55°C to 175°C and a soldering temperature tolerance of 300°C for 10 seconds. Thermal resistance from junction-to-case is 0.4°C/W and junction-to-ambient is 62°C/W when mounted on a standard PCB.

Datasheet Summary
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IRFB4115PbF is a 150V N-channel MOSFET in a TO-220 package, designed for high-efficiency synchronous rectification, uninterruptible power supplies, and high-speed switching applications. It has a continuous drain current of 104A at 25°C and 74A at 100°C, a typical on-resistance of 9.3mΩ at 10V gate drive, and a pulsed drain current rating of 420A. The device features a maximum power dissipation of 380W, a gate-to-source voltage rating of ±20V, and an avalanche energy of 830mJ. Its body diode exhibits a forward voltage of 1.3V at 62A and reverse recovery times of 86ns at 25°C and 110ns at 125°C. The MOSFET is RoHS compliant, halogen-free, and lead-free, with a junction temperature range of -55°C to 175°C and a soldering temperature tolerance of 300°C for 10 seconds. Thermal resistance from junction-to-case is 0.4°C/W and junction-to-ambient is 62°C/W when mounted on a standard PCB.

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Supplier Links
N-Channel Power MOSFET - IRFB4115 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
N-Channel Power MOSFET
IRFB4115
N-Channel Power MOSFET IRFB4115
150V Single N-Channel StrongIRFET™ Power MOSFET in a TO-220 package The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. Summary of Features Industry standard through-hole power package High-current rating Product qualification according to JEDEC standard Silicon optimized for applications switching below <100 kHz Softer body-diode compared to previous silicon generation Wide portfolio available Benefits Standard pinout allows for drop in replacement High-current carrying capability package Industry standard qualification level High performance in low frequency applications Increased power density Provides designers flexibility in selecting the most optimal device for their application Potential Applications LEV Forklift Power and gardening tool Applications EV charging Fuel-cell control unit (FCCU) Industrial automation Offline UPS - high frequency transformers Uninterruptible power supplies (UPS) Designers who used this product also designed with IRF1405 | N-Channel Power MOSFET IRFB7437 | N-Channel Power MOSFET IRS2093MPBF | Discrete Class D Audio Amplifier ICs IRFR5410 | P-Channel Power MOSFET IRF7324 | P-Channel Power MOSFET IRF1404Z | N-Channel Power MOSFET IRF1405 | N-Channel Power MOSFET IRFB7437 | N-Channel Power MOSFET IRS2093MPBF | Discrete Class D Audio Amplifier ICs IRFR5410 | P-Channel Power MOSFET IRF7324 | P-Channel Power MOSFET IRF1404Z | N-Channel Power MOSFET IRF1405 | N-Channel Power MOSFET IRFB7437 | N-Channel Power MOSFET 1 2

150V Single N-Channel StrongIRFET™ Power MOSFET in a TO-220 package

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.


Summary of Features

  • Industry standard through-hole power package
  • High-current rating
  • Product qualification according to JEDEC standard
  • Silicon optimized for applications switching below <100 kHz
  • Softer body-diode compared to previous silicon generation
  • Wide portfolio available

Benefits

  • Standard pinout allows for drop in replacement
  • High-current carrying capability package
  • Industry standard qualification level
  • High performance in low frequency applications
  • Increased power density
  • Provides designers flexibility in selecting the most optimal device for their application

Potential Applications

LEV

Forklift

Power and gardening tool


Applications

  • EV charging
  • Fuel-cell control unit (FCCU)
  • Industrial automation
  • Offline UPS - high frequency transformers
  • Uninterruptible power supplies (UPS)

Designers who used this product also designed with


  • IRF1405 |
    N-Channel Power MOSFET
  • IRFB7437 |
    N-Channel Power MOSFET
  • IRS2093MPBF |
    Discrete Class D Audio Amplifier ICs
  • IRFR5410 |
    P-Channel Power MOSFET
  • IRF7324 |
    P-Channel Power MOSFET
  • IRF1404Z |
    N-Channel Power MOSFET
  • IRF1405 |
    N-Channel Power MOSFET
  • IRFB7437 |
    N-Channel Power MOSFET
  • IRS2093MPBF |
    Discrete Class D Audio Amplifier ICs
  • IRFR5410 |
    P-Channel Power MOSFET
  • IRF7324 |
    P-Channel Power MOSFET
  • IRF1404Z |
    N-Channel Power MOSFET
  • IRF1405 |
    N-Channel Power MOSFET
  • IRFB7437 |
    N-Channel Power MOSFET

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Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IRFB4115
Product Name N-Channel Power MOSFET
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0110 ohms
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