Infineon Technologies AG Channel Type Infineon IRFB4019PBF.

Description
Channel Type:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:17A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.9V; Power Dissipation:80W; No. of Pins:3Pins RoHS Compliant: Yes
Description
Channel Type:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:17A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.9V; Power Dissipation:80W; No. of Pins:3Pins RoHS Compliant: Yes
Datasheet
Datasheet Summary
Powered by GS/AI

The IRFB4019PBF is a digital audio MOSFET designed for Class-D audio amplifier applications, featuring a TO-220AB package with three pins. It has a drain-to-source voltage rating of 150 V, a continuous drain current of 17 A at 25°C, and a typical on-resistance of 80 mΩ at 10 V gate drive. The gate charge totals 13 nC, with a switch charge of 5.1 nC, and the internal gate resistance is 2.4 Ω. The device supports a maximum junction temperature of 175°C and has repetitive avalanche capability with a single-pulse avalanche energy of 73 mJ. Thermal resistance from junction to case is 1.88 °C/W, and from junction to ambient is 62 °C/W. The part includes a body diode with a reverse recovery time of up to 96 ns and a charge of up to 240 nC.

Datasheet Summary
Powered by GS/AI

The IRFB4019PBF is a digital audio MOSFET designed for Class-D audio amplifier applications, featuring a TO-220AB package with three pins. It has a drain-to-source voltage rating of 150 V, a continuous drain current of 17 A at 25°C, and a typical on-resistance of 80 mΩ at 10 V gate drive. The gate charge totals 13 nC, with a switch charge of 5.1 nC, and the internal gate resistance is 2.4 Ω. The device supports a maximum junction temperature of 175°C and has repetitive avalanche capability with a single-pulse avalanche energy of 73 mJ. Thermal resistance from junction to case is 1.88 °C/W, and from junction to ambient is 62 °C/W. The part includes a body diode with a reverse recovery time of up to 96 ns and a charge of up to 240 nC.

Suppliers

Company
Product
Description
Supplier Links
Channel Type Infineon - 32AC0687 - Newark, An Avnet Company
Chicago, IL, United States
Channel Type Infineon
32AC0687
Channel Type Infineon 32AC0687
Channel Type:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:17A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.9V; Power Dissipation:80W; No. of Pins:3Pins RoHS Compliant: Yes

Channel Type:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:17A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.9V; Power Dissipation:80W; No. of Pins:3Pins RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Newark, An Avnet Company
Product Category Transistors
Product Number 32AC0687
Product Name Channel Type Infineon
Package Type TO-3
Unlock Full Specs
to access all available technical data

Similar Products

Bipolar Transistors - 1697439 - RS Components, Ltd.
Specs
Transistor Type BJT
Polarity NPN
Package Type Sot-89
View Details
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMBG120R020M1 - AIMBG120R020M1 - Infineon Technologies AG
Specs
Transistor Type MOSFET
Polarity N-Channel; N
Transistor Technology / Material Silicon carbide
View Details