Infineon Technologies AG Channel Type Infineon IRFB4019PBF.

Description
Channel Type:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:17A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.9V; Power Dissipation:80W; No. of Pins:3Pins RoHS Compliant: Yes
Description
Channel Type:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:17A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.9V; Power Dissipation:80W; No. of Pins:3Pins RoHS Compliant: Yes
Datasheet
Datasheet Summary
Powered by GS/AI

The IRFB4019PBF is a digital audio MOSFET designed for Class-D audio amplifier applications, featuring a TO-220AB package with three pins. It has a drain-to-source voltage rating of 150 V, a continuous drain current of 17 A at 25°C, and a typical on-resistance of 80 mΩ at 10 V gate drive. The gate charge totals 13 nC, with a switch charge of 5.1 nC, and the internal gate resistance is 2.4 Ω. The device supports a maximum junction temperature of 175°C and has repetitive avalanche capability with a single-pulse avalanche energy of 73 mJ. Thermal resistance from junction to case is 1.88 °C/W, and from junction to ambient is 62 °C/W. The part includes a body diode with a reverse recovery time of up to 96 ns and a charge of up to 240 nC.

Datasheet Summary
Powered by GS/AI

The IRFB4019PBF is a digital audio MOSFET designed for Class-D audio amplifier applications, featuring a TO-220AB package with three pins. It has a drain-to-source voltage rating of 150 V, a continuous drain current of 17 A at 25°C, and a typical on-resistance of 80 mΩ at 10 V gate drive. The gate charge totals 13 nC, with a switch charge of 5.1 nC, and the internal gate resistance is 2.4 Ω. The device supports a maximum junction temperature of 175°C and has repetitive avalanche capability with a single-pulse avalanche energy of 73 mJ. Thermal resistance from junction to case is 1.88 °C/W, and from junction to ambient is 62 °C/W. The part includes a body diode with a reverse recovery time of up to 96 ns and a charge of up to 240 nC.

Suppliers

Company
Product
Description
Supplier Links
Channel Type Infineon - 32AC0687 - Newark, An Avnet Company
Chicago, IL, United States
Channel Type Infineon
32AC0687
Channel Type Infineon 32AC0687
Channel Type:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:17A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.9V; Power Dissipation:80W; No. of Pins:3Pins RoHS Compliant: Yes

Channel Type:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:17A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4.9V; Power Dissipation:80W; No. of Pins:3Pins RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Newark, An Avnet Company
Product Category Transistors
Product Number 32AC0687
Product Name Channel Type Infineon
Package Type TO-3
Unlock Full Specs
to access all available technical data

Similar Products

Bipolar Transistors - 1690596 - RS Components, Ltd.
Specs
Transistor Type BJT
Polarity NPN
Package Type SOT23; Sot-23
View Details
45 V, 500 mA NPN general-purpose transistors - BC816-25W-QX - Nexperia B.V.
Specs
Transistor Type BJT
Package Type SOT323; SOT323 SOT323
Transistor Grade / Operating Range Automotive
View Details
2 suppliers
Single FETs, MOSFETs - 448-AIMDQ75R050M2HXTMA1CT-ND - DigiKey
Specs
Polarity N-Channel
Transistor Technology / Material Silicon Carbide
Package Type 22-PowerBSOP Module
View Details