The IRFB3306PbF is a silicon power MOSFET designed for high-efficiency synchronous rectification and high-speed switching in SMPS and UPS applications. It is available in a TO-220AB package with a maximum continuous drain current of 160 A at 25°C (silicon-limited) and 120 A (wire-bond-limited). The device has a typical on-resistance of 3.3 mΩ at VGS = 10 V and ID = 75 A, with a maximum of 4.2 mΩ. It can withstand a gate-to-source voltage of ±20 V and has a peak pulsed drain current of 620 A. The single-pulse avalanche energy is rated at 184 mJ. Thermal resistance is 0.65 °C/W from junction-to-case and 62 °C/W from junction-to-ambient in a TO-220 mount. The MOSFET is RoHS compliant and halogen-free.
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The IRFB3306PbF is a silicon power MOSFET designed for high-efficiency synchronous rectification and high-speed switching in SMPS and UPS applications. It is available in a TO-220AB package with a maximum continuous drain current of 160 A at 25°C (silicon-limited) and 120 A (wire-bond-limited). The device has a typical on-resistance of 3.3 mΩ at VGS = 10 V and ID = 75 A, with a maximum of 4.2 mΩ. It can withstand a gate-to-source voltage of ±20 V and has a peak pulsed drain current of 620 A. The single-pulse avalanche energy is rated at 184 mJ. Thermal resistance is 0.65 °C/W from junction-to-case and 62 °C/W from junction-to-ambient in a TO-220 mount. The MOSFET is RoHS compliant and halogen-free.
