Infineon Technologies AG Single FETs, MOSFETs IRFB23N15DPBF

Description
N-Channel 150V 23A (Tc) 3.8W (Ta), 136W (Tc) Through Hole TO-220AB
  • Single FETs, MOSFETs - IRFB23N15DPBF-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB23N15DPBF - 205336-IRFB23N15DPBF - Win Source Electronics
    Win Source Electronics
  • MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 0.09Ohm;ID 23A;TO-220AB;PD 136W;VGS +/-30V - 70017261 - Allied Electronics, Inc.
    Allied Electronics, Inc.
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFB23N15DPBF - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Single N-Channel 150 V 0.09 Ohm 37 nC HEXFET® Power Mosfet - TO-220-3 - 376-IRFB23N15DPBF - Utmel Electronic Limited
    Utmel Electronic Limited
Request a Quote Datasheet
Description
N-Channel 150V 23A (Tc) 3.8W (Ta), 136W (Tc) Through Hole TO-220AB
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRFB23N15DPBF-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFB23N15DPBF-ND
Single FETs, MOSFETs IRFB23N15DPBF-ND
N-Channel 150V 23A (Tc) 3.8W (Ta), 136W (Tc) Through Hole TO-220AB

N-Channel 150V 23A (Tc) 3.8W (Ta), 136W (Tc) Through Hole TO-220AB

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB23N15DPBF - 205336-IRFB23N15DPBF - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB23N15DPBF
205336-IRFB23N15DPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB23N15DPBF 205336-IRFB23N15DPBF
Manufacturer: Infineon Technologies Win Source Part Number: 205336-IRFB23N15DPBF Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.8W (Ta), 136W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 150V Continuous Drain Current at 25°C: 23A (Tc) Gate-Source Threshold Voltage: 5.5V @ 250μA Max Gate Charge: 56nC @ 10V Max Input Capacitance: 1200pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 90 mOhm @ 14A, 10V Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 205336-IRFB23N15DPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.8W (Ta), 136W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 23A (Tc)
Gate-Source Threshold Voltage: 5.5V @ 250μA
Max Gate Charge: 56nC @ 10V
Max Input Capacitance: 1200pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 90 mOhm @ 14A, 10V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
150V 23A MOSFET Transistor
278-IRFB23N15DPBF
150V 23A MOSFET Transistor 278-IRFB23N15DPBF
MOSFET N-CH 150V 23A TO220AB Product overview: IRFB23N15DPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150V, 23A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 150V, 23A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFB23N15DPBF can be used for catalog matching and distributor lookup.

MOSFET N-CH 150V 23A TO220AB Product overview: IRFB23N15DPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150V, 23A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 150V, 23A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFB23N15DPBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 0.09Ohm;ID 23A;TO-220AB;PD 136W;VGS +/-30V - 70017261 - Allied Electronics, Inc.
Allied Electronics, Inc.
Fort Worth, TX, USA
MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 0.09Ohm;ID 23A;TO-220AB;PD 136W;VGS +/-30V
70017261
MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 0.09Ohm;ID 23A;TO-220AB;PD 136W;VGS +/-30V 70017261
MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 0.09Ohm;ID 23A;TO-220AB;PD 136W;VGS +/-30V

MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 0.09Ohm;ID 23A;TO-220AB;PD 136W;VGS +/-30V

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFB23N15DPBF - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFB23N15DPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFB23N15DPBF
MOSFET N-CH 150V 23A TO220AB

MOSFET N-CH 150V 23A TO220AB

Supplier's Site
Single N-Channel 150 V 0.09 Ohm 37 nC HEXFET® Power Mosfet - TO-220-3 - 376-IRFB23N15DPBF - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
Single N-Channel 150 V 0.09 Ohm 37 nC HEXFET® Power Mosfet - TO-220-3
376-IRFB23N15DPBF
Single N-Channel 150 V 0.09 Ohm 37 nC HEXFET® Power Mosfet - TO-220-3 376-IRFB23N15DPBF
Single N-Channel 150 V 0.09 Ohm 37 nC HEXFET® Power Mosfet - TO-220-3

Single N-Channel 150 V 0.09 Ohm 37 nC HEXFET® Power Mosfet - TO-220-3

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IRFB23N15DPBF
MOSFET IRFB23N15DPBF
MOSFET MOSFT 150V 23A 90mOhm 37nC

MOSFET MOSFT 150V 23A 90mOhm 37nC

Buy Now Datasheet

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Allied Electronics, Inc. Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Power MOSFET Metal-Oxide Semiconductor FET (MOSFET)
Product Number IRFB23N15DPBF-ND 205336-IRFB23N15DPBF 278-IRFB23N15DPBF 70017261 IRFB23N15DPBF 376-IRFB23N15DPBF IRFB23N15DPBF
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFB23N15DPBF 150V 23A MOSFET Transistor MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 0.09Ohm;ID 23A;TO-220AB;PD 136W;VGS +/-30V Discrete Semiconductor Products - Transistors - FETs, MOSFETs Single N-Channel 150 V 0.09 Ohm 37 nC HEXFET® Power Mosfet - TO-220-3 MOSFET
Polarity N-Channel N-Channel; N-Channel N-Channel N-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3; TO-220AB Tube TO-220 TO-220; TO-220-3
V(BR)DSS 150 volts 150 volts 150 volts 150 volts
PD 3800 to 136000 milliwatts 3800 milliwatts 136000 milliwatts 3800 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
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