P-Channel 55V 19A (Tc) 3.8W (Ta), 68W (Tc) Through Hole TO-262
Manufacturer: Infineon Technologies
Win Source Part Number: 1046801-IRF9Z34NLPBF
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 3.8W (Ta), 68W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-262
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 19A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 35nC @ 10V
Max Input Capacitance: 620pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 100 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Balance
MOSFET P-CH 55V 19A TO262 Product overview: IRF9Z34NLPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 19A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 19A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF9Z34NLPBF can be used for catalog matching and distributor lookup.
MOSFET P-CH 55V 19A TO262
P CHANNEL MOSFET, -55V, 19A, TO-262; Channel Type:P Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:19A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRF9Z34NLPBF-ND | 1046801-IRF9Z34NLPBF | 278-IRF9Z34NLPBF | IRF9Z34NLPBF | 19K8339 | IRF9Z34NLPBF |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRF9Z34NLPBF | 55V 19A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | P Channel Mosfet, -55V, 19A, To-262; Channel Type Infineon | Single FETs, MOSFETs |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel; P-Channel | ||
| Package Type | TO-262-3 Long Leads, I2PAK, TO-262AA | SOT3; TO-262 | Tube | TO-262-3 Long Leads, I2PAK, TO-262AA | TO-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
| V(BR)DSS | 55 volts | 55 volts | 55 volts | |||
| PD | 3800 to 68000 milliwatts | 3800 milliwatts | 3800 milliwatts | |||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
