Infineon Technologies AG FET, MOSFET Arrays IRF9952

Mosfet Array N and P-Channel 30V 3.5A, 2.3A 2W Surface Mount 8-SO

MOSFET N/P-CH 30V 3.5A/2.3A 8SO Product overview: IRF9952 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 3.5A, 2.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 3.5A, 2.3A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-IRF9952 can be used for catalog matching and distributor lookup.

Manufacturer: Infineon Technologies
Win Source Part Number: 1187464-IRF9952
Packaging: Tube
Mounting Style: SMD
FET Feature: Logic Level Gate
Transistor Polarity: N and P-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: 8-SO
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: 8-SOIC
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 95
MSL Level: 1 (Unlimited)
Maximum Power: 2W
Vds - Drain-Source Breakdown Voltage: 30V
Id - Continuous Drain Current: 3.5A, 2.3A
Rds On (Maximum) at Id, Vgs: 100mOhm at 2.2A, 10V
Gate Source Voltage(th) (Maximum) at Id: 1V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 14nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 190pF at 15V