MOSFET 2N-CH 20V 10A/12A 8SO Product overview: IRF9910PBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 10A, 12A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 10A, 12A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-IRF9910PBF can be used for catalog matching and distributor lookup.
Mosfet Array 2 N-Channel (Dual) 20V 10A, 12A 2W Surface Mount 8-SO
Manufacturer: Infineon Technologies
Win Source Part Number: 1187463-IRF9910PBF
Packaging: Tube
Mounting Style: SMD
FET Feature: Logic Level Gate
Transistor Polarity: 2 N-Channel (Dual)
Categories: Discrete Semiconductor Products
Supplier Device Package: 8-SO
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: 8-SOIC
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Balance
Family Part Number: IRF9910PBF
Manufacturer Pack Quantity: 3,800
MSL Level: 1 (Unlimited)
Maximum Power: 2W
Vds - Drain-Source Breakdown Voltage: 20V
Id - Continuous Drain Current: 10A, 12A
Rds On (Maximum) at Id, Vgs: 13.4mOhm at 10A, 10V
Gate Source Voltage(th) (Maximum) at Id: 2.55V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 11nC at 4.5V
Input Capacitance (Ciss) (Maximum) at Vds: 900pF at 10V
MOSFET 2N-CH 20V 10A/12A 8-SOIC
MOSFET 2N-CH 20V 10A/12A 8SO
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 289-IRF9910PBF | IRF9910PBF-ND | 1187463-IRF9910PBF | IRF9910PBF | IRF9910PBF |
| Product Name | 20V 10A 12A MOSFET Transistor | FET, MOSFET Arrays | FETs - Arrays - IRF9910PBF | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||
| Package Type | Tube | "8-SOIC (0.154"", 3.90mm Width)" | SOT3 | 8-SOIC (0.154", 3.90mm Width) | |
| Packing Method | Tube | Tube; Tube | Tube; Tube | ||
| Polarity | N-Channel; 2 N-Channel (Dual) | N-Channel; 2 N-Channel (Dual) |
