The IRF9530NS is a P-channel HEXFET® Power MOSFET in a D2-Pak (TO-263AB) surface-mount package, rated for -100V drain-to-source voltage and -14A continuous drain current at 25°C. It features a maximum on-resistance of 0.20Ω at -10V gate bias, a 175°C junction operating temperature, and is fully avalanche rated with 250mJ single pulse energy. The device meets RoHS compliance and is qualified per JEDEC JESD47F with MSL1 moisture sensitivity level. It is not qualified for automotive applications per AEC-Q100 or AEC-Q101.
-100V Single P-Channel IR MOSFET in a D2-Pak package
Benefits
P-Channel 100V 14A (Tc) 3.8W (Ta), 79W (Tc) Surface Mount D2PAK
MOSFET P-CH 100V 14A D2PAK Product overview: IRF9530NS from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 14A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 14A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRF9530NS can be used for catalog matching and distributor lookup.
MOSFET P-CH 100V 14A D2PAK
MOSFET P-CH 100V 14A D2PAK
| Infineon Technologies AG | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|
| Product Category | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IRF9530NS | IRF9530NS-ND | 278-IRF9530NS | IRF9530NS | IRF9530NS |
| Product Name | P-Channel Power MOSFET | Single FETs, MOSFETs | 100V 14A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs |
| Polarity | P-Channel; P | P-Channel | P-Channel; P-Channel | ||
| Transistor Technology / Material | Si/SiC | MOSFET (Metal Oxide) | |||
| rDS(on) | 0.2000 ohms | ||||
| TJ | 175 C (347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||
| Package Type | TO-263; D2PAK | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
