Infineon Technologies AG P-Channel Power MOSFET IRF9358

Description
-30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package Applications Adapters and chargers Convenient, smart, and secure wearables supporting your health and well-being. Edge computing Benefits Optimized for broadest availability from distribution partners Optimized for 4.5V gate-drive voltage(called Logic level), capable of being driven at 2.5V gate-drive voltage (called Super Logic level) Reduced design complexity in high-side configuration (vs N-channel device) Easier interface to Microcontroller (vs N-channel device)
  • P-Channel Power MOSFET - IRF9358 - Infineon Technologies AG
    Infineon Technologies AG
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Description
-30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package Applications Adapters and chargers Convenient, smart, and secure wearables supporting your health and well-being. Edge computing Benefits Optimized for broadest availability from distribution partners Optimized for 4.5V gate-drive voltage(called Logic level), capable of being driven at 2.5V gate-drive voltage (called Super Logic level) Reduced design complexity in high-side configuration (vs N-channel device) Easier interface to Microcontroller (vs N-channel device)
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Datasheet
Datasheet Summary
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Dual P-Channel HEXFET Power MOSFET in a SO-8 package with a drain-to-source voltage rating of -30 V, continuous drain current of -9.2 A at 25°C, and on-resistance of 16.3 mΩ at -10 V gate voltage and 23.8 mΩ at -4.5 V gate voltage. The device has a total gate charge of 19 nC, operates with a junction temperature range of -55°C to +150°C, and meets RoHS compliance and MSL1 moisture sensitivity level. It is qualified under JEDEC JESD47F guidelines and is suitable for battery charge and discharge switching in notebook PCs.

Datasheet Summary
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Dual P-Channel HEXFET Power MOSFET in a SO-8 package with a drain-to-source voltage rating of -30 V, continuous drain current of -9.2 A at 25°C, and on-resistance of 16.3 mΩ at -10 V gate voltage and 23.8 mΩ at -4.5 V gate voltage. The device has a total gate charge of 19 nC, operates with a junction temperature range of -55°C to +150°C, and meets RoHS compliance and MSL1 moisture sensitivity level. It is qualified under JEDEC JESD47F guidelines and is suitable for battery charge and discharge switching in notebook PCs.

Suppliers

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Product
Description
Supplier Links
P-Channel Power MOSFET - IRF9358 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
P-Channel Power MOSFET
IRF9358
P-Channel Power MOSFET IRF9358
-30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package Applications Adapters and chargers Convenient, smart, and secure wearables supporting your health and well-being. Edge computing Benefits Optimized for broadest availability from distribution partners Optimized for 4.5V gate-drive voltage(called Logic level), capable of being driven at 2.5V gate-drive voltage (called Super Logic level) Reduced design complexity in high-side configuration (vs N-channel device) Easier interface to Microcontroller (vs N-channel device)

-30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package


Applications

  • Adapters and chargers
  • Convenient, smart, and secure wearables supporting your health and well-being.
  • Edge computing

Benefits

  • Optimized for broadest availability from distribution partners
  • Optimized for 4.5V gate-drive voltage(called Logic level), capable of being driven at 2.5V gate-drive voltage (called Super Logic level)
  • Reduced design complexity in high-side configuration (vs N-channel device)
  • Easier interface to Microcontroller (vs N-channel device)
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IRF9358
Product Name P-Channel Power MOSFET
Polarity P-Channel; P+P
Transistor Technology / Material Si/SiC
rDS(on) 0.0163 ohms
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